TF025N06NG TUOFENG | Alldatasheet

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Technical content

  • Package Marking and Ordering Information:
  • Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID@TC=25℃ 120 A ID@TC=75℃ 90 A ID@TC=100℃ 75 A Pulsed Drain Current ① IDM 270 A Total Power Dissipation PD@TC=25℃ 80 W Total Power Dissipation PD@TA=25℃ 3.0 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 120 mJ
  • General Description The TF025N06NG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications.
  • Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching Low Thermal resistance
  • Application Synchronous Rectification for AC-DC/DC-DC converter Power Tools
  • Product Summary Part NO. TF025N06NG Marking1 TF025N06NG Marking2 MOQ 5000 D G S S GS S D DD D G SS S D DD D TF025N06NG Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com Mar 2022 V1.0 TF:tuofeng; AA:device code; Y:year code; X:Week VDS =60V ID=120A R DSON(10V typ) =2.5mΩ RDSON(4.5V typ) =3.5mΩ 025N06NG AYXA TF
  • Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC 1.65 °C/W Thermal resistance, junction - ambient RthJA - - 40 °C/W Soldering temperature, wavesoldering for 8 s Tsold - - 265 °C
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 60 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.1 2.1 V Drain-Source Leakage Current IDSS VDS=60V, VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=± 20V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=10V, ID=30A 2.5 3.5 mΩ VGS=4.5V, ID=20A 3.5 mΩ Forward Transconductance gFS VDS =25V, ID=20A 45 Source-drain voltage VSD Is=20A 1.2 V
  • Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss f = 1MHz VDS=25V VGS = 0V - 3467 - pF Output capacitance Coss - 1400 - Reverse transfer capacitance Crss - 50 -
  • Gate Charge characteristics(Ta = 25℃) Parameter Symbol Condition Min. Typ Max. Unit Total gate charge Qg VDD = 30V ID = 30A VGS = 10V - 54 - nC Gate - Source charge Qgs - 8.0 - Gate - Drain charge Qgd - 12 - Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; 1.5 S - - - - 4.8 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com TF025N06NG Mar 2022 V1.0

1) E AS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com TF025N06NG Mar 2022 V1.0

Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.000 0.035 0.039 A3 0.254REF. 0.010REF. D 4.944 5.096 0.195 0.201 E 5.974 6.126 0.235 0.241 D1 3.910 4.110 0.154 0.162 E1 3.375 3.575 0.133 0.141 D2 4.824 4.976 0.190 0.196 E2 5.674 5.826 0.223 0.229 k 1.190 1.390 0.047 0.055 b 0.350 0.450 0.014 0.018 e 1.270TYP. 0.050TYP. L 0.559 0.711 0.022 0.028 L1 0.424 0.576 0.017 0.023 H 0.574 0.726 0.023 0.029 θ 10° 12° 10° 12° Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 6www.sztuofeng.com TF025N06NG Mar 2022 V1.0