TF023N04NG

TF023N04NG TUOFENG | Alldatasheet

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Technical content

• Package Marking and Ordering Information:
• Absolute Maximum Ratings（TC =25℃） Parameter Symbol Rating Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID@TC=25℃ 110 A ID@TC=75℃ 85 A ID@TC=100℃ 65 A Pulsed Drain Current ① IDM 230 A Total Power Dissipation PD@TC=25℃ 65 W Total Power Dissipation PD@TA=25℃ 3.0 W Operating Junction Temperature T J -55 to 150 ℃ Storage Temperature TSTG -55 to 150 ℃ Single Pulse Avalanche Energy EAS 105 mJ
• General Description The TF023N04NG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications.
• Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching Low Thermal resistance
• Application Synchronous Rectification for AC-DC/DC-DC converter Power Tools
• Product Summary Part NO. TF023N04NG Marking1 023N04NG Marking2 MOQ 5000 D G S S GS S D DD D G SS S D DD D TF023N04NG Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 1www.sztuofeng.com May 2022 V1.2 TF:tuofeng; AA:device code; Y:year code; X:Week VDS =40V R R DSON(10V typ) DSON(4.5V typ) ID=110A =2.3mΩ =3.0mΩ TF 023N04NG TFAYXA

• Thermal resistance Parameter Symbol Min. Typ. Max. Unit Thermal resistance, junction - case RthJC 1.65 °C/W Thermal resistance, junction - ambient RthJA - - 40 °C/W Soldering temperature, wavesoldering for 8 s Tsold - - 265 °C
• Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Drain-Source Breakdown Voltage BVDSS VGS =0V,ID =250uA 40 V Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 1.1 2.1 V Drain-Source Leakage Current IDSS VDS=40 VGS =0V 1.0 uA Gate- Source Leakage Current IGSS VGS=± 20V ,VDS =0V ±100 nA Static Drain-source On Resistance RDS(ON) VGS=10V, ID=20A 2.3 2.8 mΩ VGS=4.5V, ID=20A 3.0 mΩ Forward Transconductance gFS VDS =25V, ID=20A Source-drain voltage VSD Is=20A 1.2 V
• Electronic Characteristics Parameter Symbol Condition Min. Typ Max. Unit Input capacitance Ciss f = 1MHz VDS=20V VGS = 0V - 2800 - pF Output capacitance Coss - 1070 - Reverse transfer capacitance Crss - 110 -
• Gate Charge characteristics(Ta = 25℃) Note: ① Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% ; 1.5 S - - - - 3.8 TF023N04NG Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 2www.sztuofeng.com May 2022 V1.2 Parameter Symbol Condition Min. Typ Max. Unit Gate Risistance Rg f = 1MHz 1.7 Ω Total gate charge Qg VDD = 20V ID = 20A VGS = 10V - 46.0 - nCGate - Source charge Qgs - 8.7 - Gate - Drain charge Qgd - 5.4 - Turn-ON Delay time tD(on) VGS=10V ,VDS=20V RG =3.0Ω,ID =20A 4.00 ns Turn-ON Rise time tr 5.00 ns Turn-Off Delay time tD(off) 35.0 ns Turn-Off Fall time tf 11.0 ns VGS = 0V, IS = 20A dIS/dt = 100A/µs Reverse Recovery Time trr 43.0 ns Reverse Recovery Charge Qrr 53.0 nC

1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit TF023N04NG Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 3www.sztuofeng.com May 2022 V1.2

Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.900 1.000 0.035 0.039 A3 0.254REF. 0.010REF. D 4.944 5.096 0.195 0.201 E 5.974 6.126 0.235 0.241 D1 3.910 4.110 0.154 0.162 E1 3.375 3.575 0.133 0.141 D2 4.824 4.976 0.190 0.196 E2 5.674 5.826 0.223 0.229 k 1.190 1.390 0.047 0.055 b 0.350 0.450 0.014 0.018 e 1.270TYP. 0.050TYP. L 0.559 0.711 0.022 0.028 L1 0.424 0.576 0.017 0.023 H 0.574 0.726 0.023 0.029 θ 10° 12° 10° 12° TF023N04NG Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET 6www.sztuofeng.com May 2022 V1.2