S8550 TUOFENG | Alldatasheet
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TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURE Power dissipation P CM: 0 . 6 2 5 W ( T a m b = 2 5℃) Collector current I CM: - 0 . 5 A Collector-base voltage V (BR)CBO : - 4 0 V Operating and storage junction temperature range T J , T stg : -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR) CBO Ic= -100 µA , I E =0 -40 V Collector-emitter breakdown voltage V(BR) CEO Ic= -0.1 mA, I B =0 -25 V Emitter-base breakdown voltage V(BR) EBO I E = -100 µ A, I C =0 -5 V Collector cut-off current I CBO V CB = -40V, I E =0 -0.1 µ A Collector cut-off current I CEO V CE = -20V, I B =0 -0.1 µ A Emitter cut-off current I EBO V EB = - 3V, I C =0 -0.1 µ A h FE(1) V CE = -1V, I C = -50mA 85 300 DC current gain h FE(2) V CE = -1V, I C = -500mA 50 Collector-emitter saturation voltage V CE (sat) I C =-500mA, I B =-50mA -0.6 V Base-emitter saturation voltage V BE (sat) I C =-500mA, I B =-50mA -1.2 V Transition frequency f T V CE =- 6 V, I C =-20mA f = 30MHz
150 MHz
(1) Rank B C D Range 85-160 120-200 160-300 TO-92 1. EMITTER 2. BASE 3. COLLECTOR Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Typical Characteristics S8550