S8205B TUOFENG | Alldatasheet
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www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD V(BR)DSS RDS(on)MAX ID 20V 0.017Ω @ 4.5V 6.0A 0.021Ω @ 2.5V MARKING EquivalentCircuit S8205B SOT-23-6 Plastic-Encapsulate MOSFETS FEATURE z TrenchFET Power MOSFET z Excellent R DS(on) z Low Gate Charge z High Power and Current Handi ng Capability z Surface Mount Package Dual N-Channel MOSFET APPLICATION z Battery Protection z Load Switch z Power Management SOT-23-6 z ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS Gate-Source Voltage V GS ±12 V Continuous Drain Current I D A Pulsed Drain Current (note 1) I DM 25 A Thermal Resistance from Junction to Ambient (note 2) R θJA 83 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ V S8205B Max Y :year code W :week code 8205B Dec,2018 V1.1
www.sztuofeng.com MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERICTISCS Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =250µA 20 V Zero gate voltage drain current I DSS V DS =18V,V GS = 0V Gate-body leakage current I GSS V GS =±12V, V DS = 0V ±50 Gate threshold voltage (note 3) V GS(th) V DS GS , I D =250µA 0.5 V Drain-source on-resistance (note 3) R DS(on) V GS =4.5V, I D =5.0A 17 m Ω V GS =2.5V, I D =4.5A 21 m Ω Forward tranconductance (note 3) g FS V DS =5V, I D =4.5A 10 S Diode forward voltage (note 3) V SD I S =1.50A, V GS = 0V 1.0 V DYNAMIC CHARACTERICTISCS (note4) Input Capacitance C iss V DS =10V , V GS =0V,f =1MHz 900 pF Output Capacitance C oss 220 pF Reverse Transfer Capacitance C rss 100 pF SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time t d(on) V DD =10V,V GS =4.5V, I D =1A,R GEN = 6 Ω 10 ns Turn-on rise time t r 11 ns Turn-off delay time t d(off) 35 ns Turn-off fall time t f 30 ns Total Gate Charge Q g V DS =10V,V GS =4.5V,I D =6A 12 nC Gate-Source Charge Q gs 2.3 nC Gate-Drain Charge Q gd 1.0 nC Notes : 1.Repetitive rating：Pluse width limited by maximum junction temperature 2.Surface Mounted on FR4 board，t≤10 sec. 3. Pulse test : Pulse width≤300μs, duty cycle≤2%. 4. Guaranteed by design, not subject to production. 1.0 S8205B 0.8 0.68 nA 500 nA Dec,2018 V1.1
www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS S8205B Dec,2018 V1.1