4409 TUOFENG | Alldatasheet
Document overview
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Technical content
Features
Advanced Trench Process Technology
- High Density Cell Design for Ultra Low On-Resistance
- Lead free product is acquired Absolute Maximum Ratings A =25 o C, unless otherwise noted) Symbol Parameter Ratings Units V DS Drain-Source Voltage -30 V V GS Gate-Source Voltage ±20 V Drain Current @T A =25 o C -12 A I D I DM Drain Current (Pulsed) a -60 A I AR Avalanche Current 30 A E AR Repetitive Avalanche Energy L=0.3mH 135 mJ Total Power Dissipation @T A =25 o C 3 P D Total Power Dissipation @T A =75 o C 2.1 W I S Maximum Diode Forward Current -2.1 A T j , T stg Operating Junction and Storage Temperature Range -55 to +150 °C R qJA Thermal Resistance Junction to Ambient (PCB mounted) b 50 °C/W a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in 2oz Cu PCB board Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain SOP-8 Shenzhen Tuofeng Semiconductor Technology co., LTD
Electrical Characteristics
A =25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min. Typ. Max. Unit Off Characteristics BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =-250uA -30 - - V V DS =-24V, V GS =0V - - -1 I DSS Zero Gate Voltage Drain Current uA I GSS Gate-Body Leakage Current V GS =±25V, V DS =0V - - ±100 nA On Characteristics c V GS(th) Gate Threshold Voltage V DS GS , I D I DS(on) On State Drain Current V DS =-5V, V GS =-10V 60 - - A V GS =-10V, I D =-12A - - 12 R DS(on) Drain-Source On-State Resistance V GS =-4.5V, I D =-10A - mW g FS Forward Transconductance V DS =-10V, I D =-5A - 26 - S Dynamic Characteristics d C iss Input Capacitance - 2076 2500 C oss Output Capacitance - 503 - C rss Reverse Transfer Capacitance V DS =-15V, V GS =0V, f=1MHz - 302 423 pF R g Gate Resistance V DS =0V, V GS =0V, f=1MHz 1 2 3 W Switching Characteristics d Q g Total Gate Charge - 37.2 - Q gs Gate-Source Charge - 7 - Q gd Gate-Drain Charge V DS =-15V, I D =-12A, V GS =-10V - 10.4 - nC t d(on) Turn-on Delay Time - 12.4 - t r Turn-on Rise Time - 8.2 - t d(off) Turn-off Delay Time - 25.6 - t f Turn-off Fall Time V DD =-15V, R L =1.25W, V GS =-10V, R G =3W - 12 - nS t rr Reverse Recovery Time - 33 40 nS Q rr Reverse Recovery Charge I DS =-12A, dI/ dt=100A/ uS - 23 - nC Drain-Source Diode Characteristics V SD Drain-Source Diode Forward Voltage V GS =0V, I S =-1A - - -1 V I S Drain-Source Diode Forward Current - - -4.2 A Note: Pulse Test: Pulse Width £300us, Duty Cycle£2% Shenzhen Tuofeng Semiconductor Technology co., LTD 4409
Shenzhen Tuofeng Semiconductor Technology co., LTD 4409
Shenzhen Tuofeng Semiconductor Technology co., LTD 4409