MMBD1503A SXSEMI | Alldatasheet
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Technical content
FEATURES
MARKING:A7 E SOT-23 MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC BlockingVoltage 200 V IO Continuous Forward Current 200 mA IFM Peak Forward Current 700 mA IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms 2.0 A PD Power Dissipation 350 mW RθJA Thermal Resistancefrom Junction toAmbient 357 ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unlessotherwisespecified) Parameter Symbol Test conditions Min Typ Max Unit Reversevoltage V(BR) IR=5μA 200 V Reversecurrent IR VR=180V 10 nA Forwardvoltage VF IF=1mA 0.75 V IF=10mA 0.85 IF=50mA 0.95 IF=100mA 1.1 IF=200mA 1.3 IF=300mA 1.5 Totalcapacitance Ctot VR=0V,f=1MHz 4 pF MMBD1503A 1 www.sxsemi.com
Ta=100℃ Ta=25℃ FORWARD VOLTAGE VF (V) PowerDeratingCurve 0 5 10 15 20 REVERSE VOLTAGE VR (V) Ta=25℃ f=1MHz 0 40 80 120 160 200 CapacitanceCharacteristics REVERSE VOLTAGE VR (V) Reverse Characteristics Ta=100℃ AMBIENT TEMPERATURE Ta=25℃ 25 50 75 100 T a (℃) 0.01 400 250 200 300 300 350 125 150 100 150 100 100 2.0 0.5 0.0 0.1 1.5 1.0 LOW LEAKAGE DIODE MMBD1503A 2 www.sxsemi.com
SOT-23 package OutIine Dimensions Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079 L 0.550REF 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23Suggested Pad Layout LOW LEAKAGE DIODE MMBD1503A 3 www.sxsemi.com