MC2836 SXSEMI | Alldatasheet
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Technical content
FEATURES
MARKING:A41 Maximum Ratings@Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak ReverseVoltage VRM 75 V DC Blocking Voltage VR 50 V Non-Repetitive PeakForwardSurgeCurrent@t=8.3ms IFSM 2.0 A Average RectifiedOutputCurrent IO 150 mA PowerDissipation PD 150 mW Thermal resistance From Junction toambient RθJA 833 ℃/W OperationJunction andStorageTemperature Range TJ,TSTG -55~+150 ℃ ElectricalCharacteristics@Ta=25℃ Parameter Symbol Conditions Min Typ Max Unit Forwardvoltage VF1 IF=10mA 1.0 V VF2 IF=50mA 1.1 V VF3 IF=100mA 1.2 V Reversecurrent IR VR=50V 0.1 uA Reverse recoverytime trr IF=10mA,VR=6V,RL=100Ω Irr=0.1*IR 4 ns Capacitance betweenterminals CT VR=0,f=1MHz 4 pF SOT-23 MC2836 1 www.sxsemi.com
2 www.sxsemi.com 0 25 50 75 100 125 150 100 150 200 0.01 0.1 100 02 0 4 0 6 0 8 0 100 1000 0 5 10 15 20 0.8 0.9 1.0 1.1 1.2 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) Ta=100 Ta=25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) Ta=100 Ta=25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) 0.3 0.03 300 Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF)
SOT-23 package OutIine Dimensions Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079 L 0.550REF 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23Suggested Pad Layout SWITCHING DIODE MC2836 3 www.sxsemi.com