DAP202U SXSEMI | Alldatasheet
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Technical content
FEATURES: l Fourtypes of packaging are available l Highspeed l Suitablefor high packing density layout l High reliability MARKING:P Maximum Ratings@Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak ReverseVoltage VRM 80 V DC Blocking Voltage VR 80 V ForwardContinuousCurrent IFM 300 mA Non-Repetitive PeakForwardSurgeCurrent@t=8.3ms IFSM 2.0 A Average RectifiedOutputCurrent IO 100 mA PowerDissipation PD 200 mW Thermal resistance From Junction toambient RθJA 625 ℃/W OperationJunction andStorageTemperature Range TJ,TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reversebreakdownvoltage V(BR) IR= 100μA 80 V Reversevoltage leakagecurrent IR VR=70V 0.1 μA Forwardvoltage VF IF=100mA 1.2 V Diodecapacitance CD VR=6V,f=1MHz 3.5 pF Reverse recoverytime trr VR=6V, IF=5mA 4 ns SOT-323 1 www.sxsemi.com DAP202U
2 www.sxsemi.com 0 25 50 75 100 125 150 100 150 200 250 0.1 100 02 0 4 0 6 0 8 0 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Pulsed T a =100 T a =25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) T a =100 T a =25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Pulsed T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF)
SOT-323 PackageOutline Dimensions Symbol DimensionsIn Millimeters DimensionsIn Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e 0.650TYP 0.026TYP e1 1.200 1.400 0.047 0.055 L 0.525 REF 0.021 REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SOT-323Suggested Pad Layout SWITCHING DIODE DAP202U 3 www.sxsemi.com