DAP202 SXSEMI | Alldatasheet
Document overview
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Technical content
FEATURES
l Suitablefor High Packing DensityLayout
APPLICATIONS
MARKING: P MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Symbol Parameter Value Unit VR DC BlockingVoltage 80 V IO Continuous Forward Current 100 mA IFM Peak ForwardCurrent 300 mA IFSM Non-repetitive Peak Forward Surge Current@t= 8.3ms 2 A PD Power Dissipation 200 mW RθJA Thermal Resistance from Junction toAmbient 625 ℃/W TJ,Tstg Operation Junction and Storage TemperatureRange -55~+150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ unlessotherwisespecified) Parameter Symbol Test conditions Min Typ Max Unit Reversevoltage V(BR) IR=100μA 80 V Reversecurrent IR VR=70V 0.1 μA Forwardvoltage VF IF=100mA 1.2 V Totalcapacitance Ctot VR=6V,f=1MHz 3.5 pF Reverserecoverytime trr IF= IR=5mA,VR=6V 4 ns SOT-23 1 www.sxsemi.com DAP202
2 www.sxsemi.com 0 25 50 75 100 125 150 100 150 200 250 300 0.1 100 02 0 4 0 6 0 8 0 100 1000 0 5 10 15 20 1.0 1.1 1.2 1.3 1.4 Forward Characteristics Reverse Characteristics Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) 0.3 Ta=100 Ta=25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) 300 Ta=100 Ta=25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V) Ta=25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF)
SOT-23 package OutIine Dimensions Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079 L 0.550REF 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23Suggested Pad Layout SWITCHING DIODE DAP202 3 www.sxsemi.com