DAN202U SXSEMI | Alldatasheet
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Technical content
Maximum Ratings@Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak ReverseVoltage VRM 80 V DC Blocking Voltage VR 80 V ForwardContinuousCurrent IFM 300 mA Non-Repetitive PeakForwardSurgeCurrent@t=8.3ms IFSM 2.0 A Average RectifiedOutputCurrent IO 100 mA PowerDissipation PD 200 mW Thermal resistance From Junction toambient RθJA 625 ℃/W OperationJunction andStorageTemperature Range TJ,TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwisespecified) Parameter Symbol Test conditions Min Max Unit Reversebreakdownvoltage V(BR) IR= 100μA 80 V Reversevoltage leakagecurrent IR VR=70V 0.1 μA Forwardvoltage VF IF=100mA 1.2 V Diodecapacitance CD VR=6V,f=1MHz 3.5 pF Reverse recoverytime trr VR=6V, IF=5mA 4 ns FEATURES: l Fourtypes of packaging are available l Highspeed l Suitablefor high packing density layout l High reliability MARKING:N SWITCHING DIODE 1 www.sxsemi.com DAN202U
Forward Characteristics Reverse Characteristics FORWARD VOLTAGE VF (V) 1000 300 100 0 20 40 60 80 REVERSE VOLTAGE VR (V) CapacitanceCharacteristics T a =25℃ Hz 0 5 10 15 20 REVERSE VOLTAGE VR (V) P o w e r D e r a t i n g C u r v e 25 50 75 AMBIENT TEMPERATURE 100 T a (℃) 250 200 125 150 100 100 150 0.3 0.1 f=1M T =1 a 00℃ T =25 a SWITCHING DIODE DAN202U 2 www.sxsemi.com
SOT-323 PackageOutline Dimensions Symbol DimensionsIn Millimeters DimensionsIn Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e 0.650TYP 0.026TYP e1 1.200 1.400 0.047 0.055 L 0.525 REF 0.021 REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SOT-323Suggested Pad Layout SWITCHING DIODE DAN202U 3 www.sxsemi.com