DA227 SXSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
FEATURES
l Suitableforhigh packingdensity layout l High reliability MARKING: N20 Maximum Ratings@Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak ReverseVoltage VRM 80 V DC Blocking Voltage VR 80 V ForwardContinuousCurrent IFM 300 mA Non-Repetitive PeakForwardSurgeCurrent@t=8.3ms IFSM 2.0 A Average RectifiedOutputCurrent IO 100 mA PowerDissipation PD 200 mW Thermal resistance From Junction toambient RθJA 625 ℃/W OperationJunction andStorageTemperature Range TJ,TSTG -55~+150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reversebreakdownvoltage V(BR) IR= 100μA 80 V Reversevoltage leakagecurrent IR VR=70V 0.1 μA Forwardvoltage VF IF=100mA 1.2 V Diodecapacitance CD VR=6V,f=1MHz 3.5 pF Reverse recoverytime trr VR=6V, IF=5mA 4 ns SOT-353 1 2 DA227 1 www.sxsemi.com
Ta=100℃ Ta=25℃ FORWARD VOLTAGE VF (V) CapacitanceCharacteristics PowerDeratingCurve Ta=25℃ f=1MHz 0 4 8 12 16 20 REVERSE VOLTAGE VR (V) 25 50 75 (℃) REVERSE VOLTAGE VR (V) 0.1 1 10 ForwardCharacteristics AMBIENT TEMPERATURE Ta=100℃ Ta=25℃ 100 T a 10000 1000 250 200 100 150 100 125 150 100 0.1 SWITCHING DIODE DA227 2 www.sxsemi.com
SOT-353 PackageOutline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c 0.100 0.150 0.004 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.400 0.085 0.094 e 0.650 TYP 0.026 TYP e1 1.200 1.400 0.047 0.055 L 0.525 REF 0.021 REF L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SOT-353Suggested Pad Layout SWITCHING DIODE DA227 3 www.sxsemi.com