DA221 SXSEMI | Alldatasheet
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Maximum Ratings@Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak ReverseVoltage VRM 20 V Peak Repetitive Peak ReverseVoltage DC Blocking Voltage VRRM VR 20 V ForwardContinuousCurrent IFM 200 mA Non-Repetitive PeakForwardSurgeCurrent@t=8.3ms IFSM 2.0 A Average RectifiedOutputCurrent IO 100 mA PowerDissipation PD 150 mW Thermal resistance From Junction toambient RθJA 833 ℃/W OperationJunction andStorageTemperature Range TJ,TSTG -55~+150 ℃ ElectricalCharacteristics@Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Reverse breakdownvoltage V (BR) 20 V IR=100μA Forwardvoltage VF 1 V IF=10mA Reversecurrent IR 0.1 uA VR=15V FEATURES: l Biascircuits l Protectioncircuits SWITCHING DIODE MARKING: K DA221 1 www.sxsemi.com
2 www.sxsemi.com 048 1 2 1 6 2 0 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 100 150 200 0.0 0.4 0.8 1.2 0.1 100 048 1 2 1 6 2 0 100 1000 10000 T a =25 f=1MHz Capacitance Characteristics REVERSE VOLTAGE V R (V) CAPACITANCE BETWEEN TERMINALS C T (pF) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE T a ( ) Forward Characteristics T a =100 T a =25 FORWARD CURRENT I F (mA) FORWARD VOLTAGE V F (V) Reverse Characteristics T a =100 T a =25 REVERSE CURRENT I R (nA) REVERSE VOLTAGE V R (V)
SOT-523 PackageOutline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 D 1.500 1.700 0.059 0.067 E 0.700 0.900 0.028 0.035 E1 1.450 1.750 0.057 0.069 e 0.500 TYP. 0.020 TYP. e1 0.900 1.100 0.035 0.043 L 0.400 REF. 0.016 REF. L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° SOT-523Suggested Pad Layout SWITCHING DIODE DA221 3 www.sxsemi.com