9926A TUOFENG | Alldatasheet

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6A , 20 V . r DS(on) = 0. 030 GS =4 . 5V 5.2A , 20 V r DS(on) = 0. 040 @ V GS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady Sate Unit Drai n-S ourc e V ol t age V DS V Gat e-S ourc e V ol t age V GS V Continuous Drain Current Ta=25 6 A Pulsed Drain Current I DM A Maximum Power Dissipation T A =2 5 2.0 1.25 T A =7 0 1.3 0.8 WP D I D Dual N-Channel MOSFET 9926A Thermal Resistance Ratings Symbol Typ Max Unit t 10 sec 50 62.5 Steady State 80 100 Maximum Junction-to-Foot (Drain) Steady State R thJF 30 40 * Surface Mounted on 1" X 1"FR4 Board. R thJA Maximum Junction-to-Ambient* Parameter Shenzhen Tuofeng Semiconductor Technology Co., Ltd

Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain-Source Breakdown Voltage V DSS V GS =0V ,I D = 250 A 20 V V DS =16V , V GS = 0V 1 Gat e-B ody Leak age I GSS V DS =0V , V GS 10V 100 nA Gat e Thres hol d V ol t age V GS(th) V DS GS D = 250uA 0.5 1.0 V V GS = 4.5V , I D = 6A 0. 025 0. 030 V GS = 2.5V , I D = 5.2A 0. 040 0. 045 On-State Drain Current * I D(on) V DS 5V , V GS =4 . 5 V 20 A Forward Transconductance * g fs V DS = 15V , I D =6A 22 S Total Gate Charge Q g 13 20 Gate-Source Charge Q gs Gate-Drain Charge Q gd 3.3 Turn-On Delay Time t d(on) 23 5 Rise Time t r 40 60 Turn-Off Delay Time t d(off) 50 75 Fall Time t f 20 30 Maximum Continuous Drain-Source Diode Forward Current I S Diode Forward Voltage * V SD I S =1 . 7 A ,V GS =0V 0 . 7 1 . 2 V * Pulse test; pulse width 300 s, duty cycle 2% . V DD = 15V I D =1 A,V GS =4 . 5 V,R G L V DS = 15V , V GS =4 . 5 V,I D =6 A ns nC Zero Gat e V ol t age Drai n Current I DSS uA Drain-Source On-State Resistance * r DS(on) Shenzhen Tuofeng Semiconductor Technology Co., Ltd