BSS138 TUOFENG | Alldatasheet

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Technical content

T A =25 o C unless otherwise noted Symbol Parameter Ratings Units V DSS Drain-Source Voltage 50 V V GSS Gate-Source Voltage ±20 V I D Drain Current – Continuous (Note 1) 0.22 A – Pulsed 0.88 Maximum Power Dissipation (Note 1) 0.36 W P D Derate Above 25°C 2.8 mW/°C T J , T STG Operating and Storage Junction Temperature Range −55 to +150 °C T L Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds 300 °C Thermal Characteristics R θJA Thermal Resistance, Junction-to-Ambient (Note 1) 350 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity SS BSS138 7’’ 8mm 3000 units BSS138 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS zFeatures 1) Low on-resistance. 2) Fast switching speed. SOT-23 MARKING EquivalentCircuit w 1.GATE 2.SOURCE 3.DRAIN *w：week code V(BR)DSS RDS(on)MAX ID 50V 3.5Ω@10V 0.22A 6.0Ω@4.5V N-Channel 30-V D-S MOSFET SS 3) Drive circuits can be simple. 4) Parallel use is easy. ESDprotected2KVHBM zApplications Interfacing, switching (50V, 100mA) www.sztuofeng.com ,2018 V1.01 Mar BSS138

Electrical Characteristics

T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BV DSS Drain–Source Breakdown Voltage V GS = 0 V, I D = 250 µA 50 V ∆BV DSS J Breakdown Voltage Temperature Coefficient I D = 250 µA,Referenced to 25°C 72 mV/°C I DSS Zero Gate Voltage Drain Current V DS = 50 V, V GS = 0 V 0.5 µA V DS = 30 V, V GS = 0 V 100 nA I GSS Gate–Body Leakage. V GS = ±20 V, V DS = 0 V ±100 nA On Characteristics (Note 2) V GS(th) Gate Threshold Voltage V DS = V GS , I D = 1 mA 0.8 1.3 1.6 V GS(th) J Gate Threshold Voltage Temperature Coefficient I D = 1 mA,Referenced to 25°C –2 mV/°C R DS(on) Static Drain–Source On–Resistance V GS = 10 V, I D = 0.22 A V GS = 4.5 V, I D = 0.22 A 3.5 6.0 Ω I D(on) On–State Drain Current V GS = 10 V, V DS = 5 V 0.2 A g FS Forward Transconductance V DS = 10V, I D = 0.22 A 0.12 S Dynamic Characteristics C iss Input Capacitance 27 pF C oss Output Capacitance 13 pF C rss Reverse Transfer Capacitance V DS = 25 V, V GS = 0 V, f = 1.0 MHz 6 pF R G Gate Resistance V GS = 15 mV, f = 1.0 MHz 9 Ω Switching Characteristics (Note 2) t d(on) Turn–On Delay Time 2.5 5 ns t r Turn–On Rise Time 9 18 ns t d(off) Turn–Off Delay Time 20 36 ns t f Turn–Off Fall Time V DD = 30 V, I D = 0.29 A, V GS = 10 V, R GEN = 6 Ω 7 14 ns Q g Total Gate Charge 1.7 2.4 nC Q gs Gate–Source Charge 0.1 nC Q gd Gate–Drain Charge V DS = 25 V, I D = 0.22 A, V GS = 10 V 0.4 nC Drain–Source Diode Characteristics and Maximum Ratings I S Maximum Continuous Drain–Source Diode Forward Current 0.22 A V SD Drain–Source Diode Forward Voltage V GS = 0 V, I S = 0.44 A (Note 2) 0.8 1.4 V BSS138 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS www.sztuofeng.com ,2018 V1.02 Mar

www.sztuofeng.com ,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS Mar SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° BSS138