BAS116 SXSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Peak Repetitive Peak ReverseVoltage VRRM Working Peak ReverseVoltage VRWM 75 V DC Blocking Voltage VR Forward Continuous Current IFM 200 mA Non-Repetitive Peak Forward Surge Current @t=8.3ms IFSM 2.0 A Power Dissipation PD 225 mW Operation Junction and Storage Temperature Range TJ,TSTG -55~+150 ℃ Electrical Characteristics @Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Reverse breakdownvoltage V (BR) 75 V IR=100μA Forward voltage VF1 0.9 V IF=1mA VF2 1 V IF=10mA VF3 1.1 V IF=50mA VF4 1.25 V IF=150mA Reverse current IR 5 nA VR=75V Diode capacitance Ctot 2 pF VR=0V,f=1MHz Reverse recovery time trr 3 μs IF=IR=10mA,Irr=0.1×IR RL=100Ω
FEATURES
l Low leakagecurrentapplications l Mediumspeedswitchingtimes SWITCHING DIODE MARKING:JV BAS116 1 www.sxsemi.com
2 www.sxsemi.com 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 150 225 300 100 0 1 53 04 56 07 5 0.2 0.4 0.6 0.8 T a =25 f=1MHz Capacitance Characteristics CAPACITANCE BETWEEN TERMINALS C T (pF) REVERSE VOLTAGE V R (V) Power Derating Curve POWER DISSIPATION P D (mW) AMBIENT TEMPERATURE Ta ( ) 200 Forward Characteristics FORWARD VOLTAGE V F (V) FORWARD CURRENT I F (mA) T a =25 T a =100 Reverse Characteristics REVERSE VOLTAGE V R (V) REVERSE CURRENT I R (nA) T a =25 T a =100
SOT-23 PackageOutline Dimensions Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950TYP 0.037TYP e1 1.800 2.000 0.071 0.079 L 0.550REF 0.022REF L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° SOT-23Suggested Pad Layout SWITCHING DIODE BAS116 3 www.sxsemi.com