9435 TUOFENG | Alldatasheet

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Technical content

v 1 . 0 P-Channel Enhancement Mode Power MOSFET

Description

The 9435 uses advanced trench technology to provide excellent R DS , low gate charge and operation with gate voltages as low as 4.5V. (ON) (ON) (ON) General Features

  • V S = -30V D R DS < 85mΩ @ V GS =-4.5V R DS < 57mΩ @ V GS =-10V High power and current handing capability Lead free product is acquired Surface mount package Application
  • Battery Switch Load switch Power management bsolute Maximum Ratings (T A =25℃unless otherwise noted) bol Limit Unit A Parameter Sym Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V -5.3 T A =25℃ Continuous Drain Current (T J =150℃) I D A Drain Current-Pulsed (Note 1) I DM A -20 Maximum Power Dissipation P D 2.0 W Operating Junction and Storage Temperature Range T G -55 50 J ST To 1 ℃ Thermal Characteristic -Ambient (Note 2) R θJA 50 /W℃ Thermal Resistance,Junction-to = -5.3A D I = -4.2A D I SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 9435 SOP-8 Equivalent Circuit MARKING 9435 o TFCYWP Y :year code W :week code SD S D SD G D Top View S G D

v 1 . 0 Parameter Symbol Con dition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -1 V GS =-10V, I D =-5.3A - 51 57 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-4.2A - 75 85 mΩ Forward Transconductance g FS DS =-15V,I D =-5.3A 0 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 845 - PF Output Capacitance C oss - 120 - PF Reverse Transfer Capacitance V DS =-15V,V GS =0V, C rss F=1.0MHz - 80 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 17 - nS Turn-on Rise Time t r - 18 - nS Turn-Off Delay Time t d (off) 60 - nS Turn-Off Fall Time t f V DD =-25V, ID=-2A, V GS =-10V,R GEN =6Ω 27 - nS Total Gate Charge Q g - 22 - nC Gate-Source Charge Q gs - 4.5 - nC Gate-Drain Charge Q gd V DS =-15V,I D =-4.6A V GS =-10V - 2 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S Notes: Rating: Pulse width limited by maximum junction temperature. 1. Repetitive 2. Surface Mounted on FR4 Board, t ≤ 10 sec. ≤ 2%. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle 4. Guaranteed by design, not subject to production -3.0 V- SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS Electrical Characteristics (T A =25℃unless otherwise noted) =-2.0A -1.2 V- - R L =12.5Ω 9435

v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 02468 1 0 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 012345 Typical Characteristics T J =-55°C T J =25°C T J =125°C Drain Current (A) Transfer Characteristics GS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature Tj - Junction Temperature (°C) GS(th)- Threshold Voltage (V) (Normalized) On-Resistance vs. Drain Current GS =4.5V D - Drain Current (A) GS =10V R DS(on) -On-Resistance (Ω ) DS =250µA Output Characteristics D -Drain Current (A) DS - Drain-to-Source Voltage (V) GS =4V GS =5,6,7,8,9,10V GS =3V 123456789 1 0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 GS - Gate-to-Source Voltage (V) R DS(on) -On-Resistance (Ω ) On-Resistance vs. Gate-to-Source Voltage R DS(on) -On-Resistance (Ω ) (Normalized) On-Resistance vs. Junction Temperature T J - Junction Temperature (°C) GS =10V D =4.6A D =4.6A 9435

v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 0 5 10 15 20 25 30 200 400 600 800 1000 1200 0 5 10 15 20 25 DS - Drain-to-Source Voltage (V) Capacitance Capacitance (pF) Gate Charge Q G - Gate Charge (nC) GS -Gate-Source Voltage (V) DS =15V DS =4.6A Frequency=1MHz Crss Coss Ciss 0.01 0.1 1 10 1E-4 1E-3 0.01 0.1 1 10 0.01 0.1 0.1 Single Pulse Power Time (sec) Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Normalized Thermal Transient Impedence, Junction to Ambient D= 0.02 Duty Cycle = 0.5 D= 0.2 D= 0.1 D= 0.05 SINGLE PULSE Power (W) Source-Drain Diode Forward Voltage SD -Source-to-Drain Voltage (V ) S -Source Current (Α ) T J =150°C T J =25°C 1.Duty Cycle, D=t1/t2 2.Per Unit Base=R thJA =50°C/W 3.T JM A DM Z thJA 4.Surface Mounted 9435

v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS Millimeters Inches Dim Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 e1 0.33 0.51 0.013 0.020 e2 1.27BSC 0.50BSC φ 18 ° 8° H E 0.015X45 D A 0.004max. L SOP-8 pin ( Reference JEDEC Registration MS-012) Packaging Information 9435