8810 TUOFENG | Alldatasheet
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V DS (V) = 20V I D = 6A (V GS = 4.5V) R DS(ON) < 15mΩ (V GS = 4.5V) R DS(ON) < mΩ (V GS = 2.5V) ESD Rating: 2000V HBM General Description The 8810 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product 8810 is Pb-free (meets ROHS & Sony 259 specifications). 8810 is electrically identical. D1/D2 D1/D21 TSSOP-8 Top View Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8810
±10 A V GS(th) 0.5 0.6 1 V I D(ON) 30 A mΩ g FS 29 S V SD I S 2.5 A C iss 1160 pF C oss 187 pF C rss 146 pF R g 1.5 Ω Q g 16 nC Q gs 0.8 nC Q gd 3.8 nC t D(on) 6.2 ns t r 12.7 ns t D(off) 51.7 ns t f 16 ns t rr 17.7 ns Q rr 6.7 nC Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I F =6A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current I D =250µA, V GS =0V V GS =4.5V, V DS =5V V GS =4.5V, I D =6A Reverse Transfer Capacitance I F =6A, dI/dt=100A/µs Electrical Characteristics (T =25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions I DSS A Gate Threshold Voltage V DS GS I D =250µA V DS =16V, V GS =0V Zero Gate Voltage Drain Current I GSS Gate-Body leakage current V DS =0V, V GS =±10V R DS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage mΩ V GS =2.5V, I D =5.5A I S =1.5A,V GS =0V V DS =5V, I D =6A Turn-On Rise Time Turn-Off DelayTime V GS =5V, V DS =10V, R L =1.35Ω, R GEN =3Ω Gate resistance V GS =0V, V DS =0V, f=1MHz Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =10V, I D =6AGate Source Charge Turn-On DelayTime DYNAMIC PARAMETERS V GS =0V, V DS =10V, f=1MHz Gate Drain Charge Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8810 1513 1917 V1.2 u n