8205A TUOFENG | Alldatasheet
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www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD V(BR)DSS RDS(on)MAX ID 20V 0.018Ω @ 4.5V 7.5. A 0.026Ω @ 2.5V MARKING EquivalentCircuit DFN-2x3-6L Plastic-Encapsulate MOSFETS FEATURE z TrenchFET Power MOSFET z Excellent R DS(on) z Low Gate Charge z High Power and Current Handi ng Capability z Surface Mount Package Dual N-Channel MOSFET APPLICATION z Battery Protection z Load Switch z Power Management DFN-2x3-6L z ABSOLUTE MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS Gate-Source Voltage V GS ±12 V Continuous Drain Current I D A Pulsed Drain Current (note 1) I DM 25 A Thermal Resistance from Junction to Ambient (note 2) R θJA 90 ℃/W Junction Temperature T J 150 ℃ Storage Temperature T STG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ V 7.5 Max Y :year code W :week code 8205A TFXYWC z D1/D2 8205A 8205A
www.sztuofeng.com Feb,2018 V1.02 MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERICTISCS Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =250µA 20 V Zero gate voltage drain current I DSS V DS =19V,V GS = 0V Gate-body leakage current I GSS V GS =±12V, V DS = 0V ±100 nA Gate threshold voltage (note 3) V GS(th) V DS GS , I D =250µA 0.5 V Drain-source on-resistance (note 3) R DS(on) V GS =4.5V, I D =5.0A m Ω V GS =3.8V, I D =4.0A 21 m Ω Forward tranconductance (note 3) g FS V DS =5V, I D =4A 10 S Diode forward voltage (note 3) V SD I S =1.50A, V GS = 0V 1.0 V DYNAMIC CHARACTERICTISCS (note4) Input Capacitance C iss V DS =10V,V GS =0V,f =1MHz 800 pF Output Capacitance C oss 150 pF Reverse Transfer Capacitance C rss 125 pF SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time t d(on) 18 ns Turn-on rise time t r 4.8 ns Turn-off delay time t d(off) 43.5 ns Turn-off fall time t f 20 ns Total Gate Charge Q g V DS =10V,V GS =4.5V,I D =5A 11 nC Gate-Source Charge Q gs 2.2 nC Gate-Drain Charge Q gd 2.5 nC Notes : 1.Repetitive rating：Pluse width limited by maximum junction temperature 2.Surface Mounted on FR4 board，t≤10 sec. 3. Pulse test : Pulse width≤300μs, duty cycle≤2%. 4. Guaranteed by design, not subject to production. 1.0 16 18 V GS =4.5V, V DS =10V, R GEN =3Ω 100 nA SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD DFN-2x3-6L Plastic-Encapsulate MOSFETS 0.7 V GS =2.5V, I D =4.0A 26 m Ω 2218 I D =3A 8205A
SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD DFN-2x3-6L Plastic-Encapsulate MOSFETS Min. Max. Min. Max. A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 D 1.950 2.050 0.077 0.081 E 2.950 3.050 0.116 0.120 D1 1.450 1.550 0.057 0.061 E1 1.650 1.750 0.065 0.069 k b 0.200 0.300 0.008 0.012 e L 0.300 0.400 0.012 0.016 0.500TYP. 0.020TYP. Symbol Dimensions In Millimeters Dimensions In Inches 0.200MIN. 0.008MIN. 0.203REF. 0.008REF. 0.300 1.550 1.600 2.250 www.sztuofeng.com Feb,2018 V1.0 8205A