8205 TUOFENG | Alldatasheet
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www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD V(BR)DSS RDS(on)MAX ID 20V 0.025Ω @ 4.5V 5.0A 0.033Ω @ 2.5V MARKING EquivalentCircuit SOT-23-6 Plastic-Encapsulate MOSFETS FEATURE z TrenchFET Power MOSFET z Excellent R DS(on) z Low Gate Charge z High Power and Current Handi ng Capability z Surface Mount Package APPLICATION z Battery Protection z Load Switch z Power Management SOT-23-6 z ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 Gate-Source Voltage VGS V Continuous Drain Current ID A Pulsed Drain Current (note 1) IDM 15 A Thermal Resistance from Junction to Ambient (note 2) RθJA 100 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) T L 260 ℃ V Max Y :year code W :week code ±12
8205 Dual N-Channel MOSFET
Y Oct 2020 V1.1
www.sztuofeng.com 2 MOSFETELECTRICAL CHARACTERISTICS Ta=25℃ unlessotherwisespecified SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERICTISCS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA 20 V Zero gate voltage drain current I DSS VDS =16V,VGS = 0V 1 µA Gate-body leakage current IGSS VGS =±12V, VDS = 0V ±100 nA Gate threshold voltage (note 3) V GS(th) VDS =VGS, ID =250µA 0.5 V Drain-source on-resistance (note 3) R DS(on) VGS =4.5V, ID =5A 25 m Ω VGS =2.5V, ID =4A 33 m Ω Forward tranconductance (note 3) g FS VDS =5V, ID =5A 10 S Diode forward voltage (note 3) V SD I S=3.50A, VGS = 0V 1.2 V DYNAMIC CHARACTERICTISCS (note4) Input Capacitance Ciss VDS =8V,VGS =0V,f =1MHz 800 pF Output Capacitance Coss 155 pF Reverse Transfer Capacitance C rss 125 pF SWITCHING CHARACTERICTISCS (note 4) Turn-on delay time td(on) VDD=10V,VGS=4V, ID=1A,RGEN=10Ω 18 ns Turn-on rise time tr 4.8 ns Turn-off delay time td(off) 43.5 ns Turn-off fall time tf 20 ns Total Gate Charge Qg VDS =10V,VGS =4.5V,ID=4A 11 nC Gate-Source Charge Qgs 2.2 nC Gate-Drain Charge Qgd 2.5 nC Notes : 1.Repetitive rating：Pluse width limited by maximum junction temperature 2.Surface Mounted on FR4 board，t≤10 sec. 3. Pulse test : Pulse width≤300μs, duty cycle≤2%. 4. Guaranteed by design, not subject to production. 1.0 Oct 2020 V1.1 0.65 8205
www.sztuofeng.com 6 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS Oct 2020 V1.1 8205