6604

6604 TUOFENG | Alldatasheet

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VDS = 20V -20V ID = 3.4A (VGS =4.5V) -2.5A (V GS =-4.5V) RDS(ON) RDS(ON) < 65mΩ (VGS =4.5V) < 75m Ω (VGS =-4.5V) < 75mΩ (VGS =2.5V) < 105m Ω (VGS =-2.5V) < 100mΩ (VGS =1.8V) < 180m Ω (VGS =-1.8V) n-channel p -channel S2 S1 D11 3 4 Symbol VDS VGS IDM TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State R θJL -20Drain-Source Voltage 20 V UnitsParameter ° C/WR θJA -13 Units 110 W ° C A-2.53.4 1.11.1 -55 to 150 Parameter Typ Max Absolute Maximum Ratings T =25° C unless otherwise noted Max n-channel Max p-channel Gate-Source Voltage ±8 V Thermal Characteristics Junction and Storage Temperature Range Maximum Junction-to-Lead ° C/W ° C/WMaximum Junction-to-Ambient A D TA=25° CContinuous Drain Current TA=25° C ID 106 150 Power Dissipation B PD Pulsed Drain Current C Maximum Junction-to-Ambient A n-channel p -channel S2 S1 D11 3 4 Product Summary SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23-6L Equivalent Circuit MARKING F4YW z Y :year code W :week code High power and current handing capability Lead free product is acquired Surface mount package FEATURE www.sztuofeng.com Jan 2019 V1.1 N and P-Channel Enhancement Mode Power MOSFET

VDS =20V, VGS =0V 1 IGSS ±100 nA VGS(th) Gate Threshold Voltage 0.4 0.7 1 V ID(ON) 13 A 51 65 58 75 m Ω 68 100 m Ω gFS 16 S VSD 0.7 1 V IS 1.5 A C iss 205 260 320 pF C oss 33 48 63 pF C rss 16 27 38 pF R g 1.5 3 4.5 Ω Q g(4.5V) 2.9 3.8 nC Q gs 0.4 nC Q gd 0.6 nC tD(on) 2.5 ns tr 3.2 ns t D(off) ns Reverse Transfer Capacitance VGS =0V, VDS =10V, f=1MHz SWITCHING PARAMETERS N-Channel Electrical Characteristics (TJ=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage On state drain current ID =250µA, VGS =0V VGS =4.5V, VDS =5V VGS =4.5V, ID =3.4A Forward Transconductance Diode Forward Voltage IS=1A,VGS =0V VDS =5V, ID =3.4A VGS =2.5V, ID =3A VGS =1.8V, ID =2A R DS(ON) Static Drain-Source On-Resistance IDSS µA VDS =VGS ID =250µA VDS =0V, VGS = ±8V Zero Gate Voltage Drain Current Gate-Body leakage current m Ω Gate resistance VGS =0V, VDS =0V, f=1MHz VGS =4.5V, VDS =10V, ID =3.4AGate Source Charge Gate Drain Charge Total Gate Charge Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS =5V, VDS =10V, RL=2.95Ω , R GEN Ω t D(off) ns tf 3 ns trr 14 19 ns Q rr 3.8 nC IF=3.4A, dI/dt=100A/µsBody Diode Reverse Recovery Time Turn-Off Fall Time Body Diode Reverse Recovery ChargeIF=3.4A, dI/dt=100A/µs Turn-Off DelayTime R GEN Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 6604 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD www.sztuofeng.com Jan 2019 V1.1 N and P-Channel Enhancement Mode Power MOSFET

Gate Charge Test Circuit & Waveform VDC DUT Vdd Vgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) t on t d(off) t f t off Id L Vgs Vds BV Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds DSS E = 1/2 LIARAR VDC Ig Vds DUT VDC Vgs Vgs 10V Qg Qgs Qgd Charge Gate Charge Test Circuit & Waveform VDC DUT Vdd Vgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) t on t d(off) t f t off Vdd Vgs Id Vgs Rg DUT VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Ig Vgs VDC DUT L Vds Vgs Vds IsdIsd Diode Recovery Test Circuit & Waveforms Vds - Vds + IF AR DSS E = 1/2 LI dI/dt IRM rr VddVdd Q = - Idt ARAR trr 6604 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD www.sztuofeng.com Jan 2019 V1.1 N and P-Channel Enhancement Mode Power MOSFET

VDS =-20V, VGS =0V -1 IGSS ±100 nA VGS(th) Gate Threshold Voltage -0.4 -0.65 -1 V ID(ON) -13 A 65 75 Ω Ω gFS 13 S VSD -0.7 -1 V IS -1.5 A C iss 560 745 pF C oss 80 pF C rss 70 pF R g 15 23 Ω Q g(4.5V) 8.5 11 nC Q gs 1.2 nC Q gd 2.1 nC tD(on) 7.2 ns tr 36 ns t D(off) ns Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS =-4.5V, VDS =-10V, RL=4Ω , R GEN Ω Gate resistance VGS =0V, VDS =0V, f=1MHz VGS =-4.5V, VDS =-10V, ID =-2.5AGate Source Charge Gate Drain Charge Total Gate Charge R DS(ON) Static Drain-Source On-Resistance m Ω IS=-1A,VGS =0V VDS =-5V, ID =-2.5A VGS =-2.5V, ID =-2A VGS =-1.8V, ID =-1A VDS =VGS ID =-250µA VDS =0V, VGS = ±8V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance Diode Forward Voltage P-Channel Electrical Characteristics (TJ=25° C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS µA Drain-Source Breakdown Voltage On state drain current ID =-250µA, VGS =0V VGS =-4.5V, VDS =-5V VGS =-4.5V, ID =-2.5A Reverse Transfer Capacitance VGS =0V, VDS =-10V, f=1MHz SWITCHING PARAMETERS t D(off) ns tf 56 ns trr 37 49 ns Q rr 27 nCBody Diode Reverse Recovery ChargeIF=-2.5A, dI/dt=100A/µs Turn-Off DelayTime R GEN Ω Turn-Off Fall Time Body Diode Reverse Recovery TimeIF=-2.5A, dI/dt=100A/µs A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. 105 m 180 170 6604 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD www.sztuofeng.com Jan 2019 V1.1 N and P-Channel Enhancement Mode Power MOSFET m

Gate Charge Test Circuit & Waveform + - -10V Vdd Vgs Id Vgs Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds L E = 1/2 LI ARAR BV DSS VDC DUT Vdd Vgs Vds Vgs RL Rg Resistive Switching Test Circuit & Waveforms Vgs Vds t t t t t t 90% 10% r on d(off) f off d(on) VDC Ig Vds DUT VDC Vgs Vgs Qg Qgs Qgd Charge Gate Charge Test Circuit & Waveform + - -10V Vdd Vgs Id Vgs Rg DUT VDC Vgs Vds Id Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds L E = 1/2 LI ARAR BV DSS I AR Ig Vgs VDC DUT L Vgs Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + dI/dt RM rr VddVdd Q = - Idt t rr -Isd -Vds F VDC DUT Vdd Vgs Vds Vgs RL Rg Resistive Switching Test Circuit & Waveforms Vgs Vds t t t t t t 90% 10% r on d(off) f off d(on) 6604 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD www.sztuofeng.com Jan 2019 V1.1 N and P-Channel Enhancement Mode Power MOSFET