5814 TUOFENG | Alldatasheet
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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data Product Summery Page 1 Apr.2019 The 5814 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The 5814 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. 9.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 5814 N-Channel Enhancement Mode Power MOSFET Schematic diagram SOP-8 top view
Symbol Parameter Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V GS =0V , I D =250uA 60 R DS(ON) Static Drain-Source On-Resistance VGS=10V , ID=8A --- mΩ VGS=4.5V , ID= A --- V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.1 1.7 2.1 V I DSS Drain-Source Leakage Current V DS =58V , V GS =0V , T J =25℃ --- --- 1 uA I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance VDS=5V , ID=9A --- 30 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 3.6 Ω Q g Total Gate Charge (4.5V) VDS=30V , VGS=10V , ID=8A --- 25 nC Q gs Gate-Source Charge --- 5.5 --- Q gd Gate-Drain Charge --- 15 --- T d(on) Turn-On Delay Time VDD=30V , VGEN=10V , RG=6.7Ω RL=3Ω --- 7.6 ns T r Rise Time --- 5.1 T d(off) Turn-Off Delay Time --- 28.2 T f Fall Time --- 5.5 C iss Input Capacitance V DS =30V , V GS =0V , f=1MHz --- 2050 pF C oss Output Capacitance --- 158 C rss Reverse Transfer Capacitance --- 120 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=8A 18 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- A I SM Pulsed Source Current 2,6 --- --- A V SD Diode Forward Voltage V GS =0V , I S =2.3A , T J =25℃ --- 1.1 V t rr Reverse Recovery Time IF=8A , dI/dt=100A/µs , TJ=25℃ --- --- nS Q rr Reverse Recovery Charge --- 3.9 --- nC Note : The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper,t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=9A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Diode Characteristics Guaranteed Avalanche Characteristics Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Page 2 BV DSS --- --- --- --- --- --- V--- --- --- --- --- 0.8 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 5814 Apr.2019
SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 5814 Test Circuit 1) E AS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit Page 3 Apr.2019
SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 5814 Page Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° Apr.2019