4953B TUOFENG | Alldatasheet

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Dual 20V P-Channel PowerTrench ÒÒ MOSFET S SSSO-8 G Pin 1 SO-8L SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD 4953B V(BR)DSS RDS(on)MAX ID -20V 0.070Ω@-4.5V -5.0A 0.110Ω@-2.5V P-Channel20-V D-S MOSFET 4953B Dual SOP-8L GeneralFEATURE

  • TrenchFETPower MOSFET
  • Lead freeproductis acquired
  • Surfacemountpackage APPLICATION
  • Load SwitchforPortable Devices
  • DC/DCConverter Maximumratings (Ta=25℃ unless otherwise noted) Parameter S y mbol Value Unit Drain-SourceVoltage VDS -20 V Gate-SourceVoltage VGS ±12 ContinuousDrainCurrent ID -5.0 PulsedDrainCurrent IDM -10 A ContinuousSource-DrainDiodeCurrent IS -1.30 MaximumPowerDissipation PD 1.0 W ThermalResistancefromJunctiontoAmbient(t≤5s) R θJA ℃/W JunctionTemperature TJ 150 StorageTemperature Tstg -55 ~+150 125 Equivalent Circuit MARKING www.sztuofeng.com Feb,2018 V1.01 4953B o TFCYWP Y :year code W :week code

Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = –10 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 10 V, VDS = 0 V 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V RDS(on) Static Drain–Source On–Resistance V GS = –2.5 V, ID = –2.5 A V GS = –4.5 V, ID = –3.5 A 110 mΩ ID(on) On–State Drain Current VGS = –4.5 V, VDS = –4.5 V –10 A gFS Forward Transconductance VDS = –5 V, ID = –2 A 5 S Dynamic Characteristics Ciss Input Capacitance 405 pF Coss Output Capacitance 75 pF Crss Reverse Transfer Capacitance VDS = –10 V, V GS = 0 V, f = 1.0 MHz 55 pF Switching Characteristics td(on) Turn–On Delay Time 11 ns tr Turn–On Rise Time 35 ns td(off) Turn–Off Delay Time 30 ns tf Turn–Off Fall Time VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 10 Ω 10 ns Qg Total Gate Charge 3.3 12 nC Qgs Gate–Source Charge 0.7 nC Qgd Gate–Drain Charge VDS = –10 V, ID = –3 A, VGS = –2.5 V 1.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A VSD Drain–Source Diode Forward Voltage V GS = 0 V, IS = –1.3 A –0.8 –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD 4953B Dual 20V P-Channel PowerTrench ÒÒ MOSFET SOP-8L www.sztuofeng.com Feb,2018 V1.02

Dual 20V P-Channel PowerTrench ÒÒ MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD 4953B SOP-8L www.sztuofeng.com Feb,2018 V1.0 SOP8 Suggested Pad Layout Min Max Min Max A A1 0.100 0.250 0 .004 0.010 A2 1.350 1.5 50 0.0 53 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 D 4.800 5.000 0.189 0.197 e E 5.800 6.200 0.228 0.244 E1 3.800 4.000 0.150 0.157 L 0.400 1.270 0.016 0.050 θ0 ° 8 ° 0 ° 8 ° Sy m bo l Dimensions In Millimeters Dimensions In Inches 0.050（BSC）1.270（BSC） 1.350 1.750 0.053 0.069