4953 TUOFENG | Alldatasheet
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Technical content
Dual 30V P-Channel PowerTrench ÒÒ MOSFET S SSSO-8 G Pin 1 SOP-8 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD 4953 V(BR)DSS RDS(on)MAX ID -30V 0.059Ω@-10. V -5.3A 0.089Ω@-4.5V P-Channel 30- V D-S MOSFET
4953 Dual
- TrenchFETPower MOSFET
- Lead freeproductis acquired
- Surfacemountpackage APPLICATION
- Load SwitchforPortable Devices
- DC/DCConverter Maximumratings (Ta=25℃ unless otherwise noted) Parameter S y mbol Value Unit Drain-SourceVoltage VDS -30 V Gate-SourceVoltage VGS ±20 ContinuousDrainCurrent ID -5.3 PulsedDrainCurrent IDM -20 A MaximumPowerDissipation PD 2.0 W ThermalResistancefromJunctiontoAmbient(t≤5s) R θJA ℃/W JunctionTemperature TJ 150 StorageTemperature Tstg -55 ~+150 125 Equivalent Circuit MARKING www.sztuofeng.com Feb,2018 V1.01 4953 o TFCYWP Y :year code W :week code
Electrical Characteristics
TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –30 V IDSS Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = –20 V, VDS = 0 V –100 nA IGSSR Gate–Body Leakage, Reverse VGS = 20 V, VDS = 0 V 100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA –1 –1.7 –3 V RDS(on) Static Drain–Source On–Resistance V GS = –10 V, ID = –5.3 A V GS = –4.5 V, ID = –4.2 A mΩ ID(on) On–State Drain Current VGS = –10 V, VDS = –5.0 V –20 A gFS Forward Transconductance VDS = –5 V, ID = –5 A 10 S Dynamic Characteristics Ciss Input Capacitance 528 pF Coss Output Capacitance 132 pF Crss Reverse Transfer Capacitance VDS = –15 V, V GS = 0 V, f = 1.0 MHz 70 pF Switching Characteristics td(on) Turn–On Delay Time 7 ns tr Turn–On Rise Time 13 ns td(off) Turn–Off Delay Time 14 ns tf Turn–Off Fall Time VDD = –15 V, ID = –1 A, VGS = –10 V, RGEN = 6 Ω 9 ns Qg Total Gate Charge 6.0 9 nC Qgs Gate–Source Charge 2.2 nC Qgd Gate–Drain Charge VDS = –15 V, ID = –5 A, VGS = –5 V 2.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current –1.3 A VSD Drain–Source Diode Forward Voltage V GS = 0 V, IS = –2.6 A –0.8 –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD Dual 20V P-Channel PowerTrench ÒÒ MOSFET SOP-8L www.sztuofeng.com Feb,2018 V1.02 4953
Dual 20V P-Channel PowerTrench ÒÒ MOSFET SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8L www.sztuofeng.com Feb,2018 V1.0 SOP8 Suggested Pad Layout Min Max Min Max A A1 0.100 0.250 0 .004 0.010 A2 1.350 1.5 50 0.0 53 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.007 0.010 D 4.800 5.000 0.189 0.197 e E 5.800 6.200 0.228 0.244 E1 3.800 4.000 0.150 0.157 L 0.400 1.270 0.016 0.050 θ0 ° 8 ° 0 ° 8 ° Sy m bo l Dimensions In Millimeters Dimensions In Inches 0.050（BSC）1.270（BSC） 1.350 1.750 0.053 0.069 4953