4884 TUOFENG | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, V GS @ 10V A ID@TC=70℃ Continuous Drain Current, V GS @ 10V 7.0 A I DM Pulsed Drain Current A EAS Single Pulse Avalanche Energy mJ I AS Avalanche Current A P D A =25℃ Total Power Dissipation 2.0 W T STG Storage Temperature Range -55 to 150 T J Operating Junction Temperature Range -55 to 150 Symbol Parameter Typ. Max. Unit R θJA Thermal Resistance Junction-ambient --- ℃/W R θJC Thermal Resistance Junction-Case --- ℃/W Absolute Maximum Ratings Thermal Data Page 1 Dec.2017 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4884 N-Channel Enhancement Mode Power MOSFET

Description

The 4884 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features

  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package PRODUCTPSUMMARY VDSS ID 30V 9.099A 7.0A PPPPP@PVGSP =P10V PPPPPP 25P@PVGS P =P4.5V RDS(on)P(mΩ)PMax D D S G S G D21 SOP-8 Equivalent Circuit MARKING 4884 o TFCYWP Y :year code W :week code www.sztuofeng.com

Symbol Parameter Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage V GS =0V , I D R DS(ON) Static Drain-Source On-Resistance VGS=10V , ID=9A --- 18 21 mΩ VGS=4.5V , ID= A --- 22 25 V GS(th) Gate Threshold Voltage V GS DS , I D =250uA 1.1 1.6 2.1 V I DSS Drain-Source Leakage Current V DS =24V , V GS =0V , T J =25℃ --- --- 1 uA I GSS Gate-Source Leakage Current V GS =±20V , V DS gfs Forward Transconductance VDS=5V , ID=9A --- 30 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz --- 3.6 Ω Q g Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=9A --- 8.9 nC Q gs Gate-Source Charge --- 1.5 --- Q gd Gate-Drain Charge --- 2.8 --- T d(on) Turn-On Delay Time VDD=15V , VGEN=10V , RG=6Ω ID=1A,RL=15Ω --- 6 8.8 ns T r Rise Time --- 8.2 T d(off) Turn-Off Delay Time --- 16 24 T f Fall Time --- 4 8 C iss Input Capacitance V DS =15V , V GS =0V , f=1MHz --- 650 pF C oss Output Capacitance --- C rss Reverse Transfer Capacitance --- Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=25V , L=0.5mH , IAS=9A 18 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current 1,6 V G D =0V , Force Current --- --- A I SM Pulsed Source Current 2,6 --- --- A V SD Diode Forward Voltage V GS =0V , I S =2.3A , T J =25℃ --- --- 1.1 V t rr Reverse Recovery Time IF=9A , dI/dt=100A/µs , TJ=25℃ --- --- nS Q rr Reverse Recovery Charge --- 3.9 --- nC Note : The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper,t<10sec. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.5mH,IAS=9A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. Diode Characteristics Guaranteed Avalanche Characteristics Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Page 2 Dec.2017 BV DSS --- --- --- --- --- SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4884 www.sztuofeng.com

R DSON (mΩ) I D = 9 A 00 . 3 0 . 6 0 . 9 I S - Source Current(A) T J =150℃ T J =25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 Normalized V GS(th) 0.3 0.6 0.9 1.2 1.5 1.8 2.1 -50 0 50 100 150 Normalized On Resistance Typical Characteristics Fig.1 T ypical Output Characteristics V GS (V) Fig.2 On-Resistance vs. G-S Voltage V SD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics T J ,Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ T J , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ Page 3 Dec.2017 VDS=15V ID=9A SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4884 www.sztuofeng.com

V DS Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 Normalized Thermal Response (R θJA 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE P DM D = T ON T Jpeak = T C DM XR θJC T ON T Fig.8 Safe Operating Area t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform Page 4 Dec.2017 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4884 www.sztuofeng.com

v 1 . 0 Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4884