4840 TUOFENG | Alldatasheet

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Technical content

v 1 . 0 N-Channel Enhancement Mode Power MOSFET

Description

The 4840 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features

  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS www.sztuofeng.com 4840 Symbol V DS V GS I DM T J , T STG Symbol Ty p Max 48 62.5 74 110 R θJL 35 40 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±20Gate-Source Voltage Drain-Source Voltage Continuous Drain Current A Maximum UnitsParameter T A =25°C Absolute Maximum Ratings T A =25°C unless otherwise noted V V 45Pulsed Drain Current B Power Dissipation A T A =25°C Junction and Storage Temperature Range A P D 1.8 -55 to 150 T A =70°C I D PRODUCTPSUMMARY VDSS ID 40V 19A 16A PPPPP@PVGSP =P10V PPPPPP P@PVGS P =P4.5V RDS(on)P(mΩ)PMax MARKING EquivalentCircuit z Y :year code W :week code SOP-8 4840 TFXYWC

v 1 . 0 www.sztuofeng.com Symbol Min Typ Max Units BV DSS 40 V 100 I GSS ±100 nA V GS(th) 1.0 1.6 V I D(ON) 45 A 12 mΩ g FS 42 S V SD 0.8 1.2 V I S 3 A C iss 1780 pF C oss 209 pF C rss 160 pF R g 9.5 Ω Q g (10V) 30 Q g (4.5V) Q gs Q gd t D(on) t r t D(off) 29.8 t f t rr 29 ns Q rr 26 nC DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current Gate resistance V GS =0V, V DS =0V, f=1MHz V GS =0V, V DS =20V, f=1MHz Input Capacitance Output Capacitance Turn-On Rise Time Turn-Off DelayTime V DD = 20V, V GEN = 10V, R L = 2Ω, R GEN =3Ω Turn-Off Fall Time Turn-On DelayTime SWITCHING PARAMETERS Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Total Gate Charge (10V) V DD = 20V, V GEN = 10V, I D = 10A mΩ V GS = 4.5V, I D = 15A I S = 10A,V GS =0V V DS = 15V, I D = 15A R DS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage I DSS A Gate Threshold Voltage V DS GS I D = 250µA V DS = 40V, V GS =0V V DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I F = 10A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current I D = 250µA, V GS =0V V GS = 10V , V DS = 5V V GS = 10V, I D = 15A Reverse Transfer Capacitance I F = 10A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. n 5 9 2.0 nC 16.2 nC 4.2 nC 9.5 nC ns 17.2 ns 6.4 ns 16.8 ns SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4840

v 1 . 0 www.sztuofeng.com Test circuit 1) E AS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4840

v1.0 Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4840