4805 TUOFENG | Alldatasheet

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Technical content

v 1 . 0 P-Channel Enhancement Mode Power MOSFET

Description

The 4805 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features V DS = -30V,I D = - 8.0A R DS(ON)typ 17mΩ @ V GS = -10V R DS(ON)typ 22mΩ @ V GS = -4.5V

  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Schematic diagram Marking and pin assignment SOP-8 top view SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS www.sztuofeng.com Symbol V DS V GS I DM T J , T STG Symbol Ty p Max 48 62.5 74 110 R θJL 35 40 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±20Gate-Source Voltage Drain-Source Voltage -30 Continuous Drain Current A Maximum UnitsParameter T A =25°C Absolute Maximum Ratings T A =25°C unless otherwise noted V V -30Pulsed Drain Current B Power Dissipation A T A =25°C Junction and Storage Temperature Range A P D 1.3 -55 to 150 T A =70°C I D - 9 4805

Page v 1 . 0 2www.sztuofeng.com Symbol Min Typ Max Units BVDSS -30 V -100 IGSS ±100 nA VGS(th) -1.1 -1.7 V ID(ON) -30 A 26 mΩ gFS 14 S VSD -0.8 -1 V IS - 6.0 A Ciss 1180 Coss Crss Rg 10 Ω Qg (10V) 26.4 Qg (4.5V) 13.5 Qgs Qgd tD(on) 7.5 tr tD(off) tf trr 25.5 ns Qrr 17.5 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. DYNAMIC PARAMETERS Maximum Body-Diode Continuous Current Gate resistance V GS=0V, VDS=0V, f=1MHz VGS=0V, VDS=-15V, f=1MHz Input Capacitance Output Capacitance Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime SWITCHING PARAMETERS Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Total Gate Charge (10V) VGS=-10V, VDS=-15V, ID=-8A mΩ VGS=-4.5V, ID=-6.0A IS=-8A,VGS=0V VDS=-5V, ID=-8A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS A Gate Threshold Voltage V DS=VGS ID=-250µA VDS=-30V, VGS=0V VDS=0V, VGS=±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-4.5V, VDS=-5V VGS=-10V, ID=-8.0A Reverse Transfer Capacitance IF=-8A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. n 17 19 -2.1 nC nC 4.5 nC 4.4 nC ns 5.5 ns 19 ns 7.0 ns nC SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS pF 162 pF 139 pF 4805

v 1 . 0 www.sztuofeng.com Test Circuit 1) E AS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4805

v 1 . 0 Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4805