4800 TUOFENG | Alldatasheet

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g , Fast Switching MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (/C0087) I D (A) 0.020@ V GS = 10 V 0.033 @ V GS = 4.5 V SD S D SD G D SO-8 Top View N-Channel MOSFET DD G S D D S S Ordering Information: Si4800 ABSOLUTE MAXIMUM RATINGS (T A = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS /C003425 V Continuous Drain Current J = 150 /C0095 a, b T A = 25/C0095C I D Continuous Drain Current J = 150/C0095C) b I D A Pulsed Drain Current (10 /C0109s Pulse Width) I DM A Continuous Source Current (Diode Conduction) a, b I S 2.3 Maximum Power Dissipation b T A = 25/C0095C P D 2.5 W Maximum Power Dissipation b P D W Operating Junction and Storage Temperature Range T J , T stg -55 to 150 /C0095C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction to Ambient (MOSFET) a t /C0118 10 sec R /C0095C/W Maximum Junction-to-Ambient (MOSFET) a Steady State R thJA /C0095C/W Notes a. Surface Mounted on FR4 Board. b. t /C0118 10 sec. Shenzhen Tuofeng Semiconductor Technology Co., Ltd

MOSFET SPECIFICATIONS (T J = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 /C0109A 0.8 V Gate-Body Leakage I GSS V DS = 0 V, V GS = /C003420 V /C0034100 nA Zero Gate Voltage Drain Current I DSS V DS = 24 V, V GS = 0 V /C0109A Zero Gate Voltage Drain Current I DSS /C0109A On-State Drain Current a I D(on) V DS /C0119 5 V, V GS = 10 V A Drain Source On State Resistance a r DS(on) V GS = 10 V, I D = 9 A 0.020 /C0087 D ra i S ource O St a t e R es i s t ance a r DS(on) V GS = 4.5 V, I D = 7 A 0.033 /C0087 Forward Transconductance a g fs V DS = 15 V, I D = 9 A S Diode Forward Voltage a V SD I S = 2.3 A, V GS = 0 V 0.71 1.2 V Dynamic b Total Gate Charge Q g 8.7 Gate-Source Charge Q gs V DS = 15 V, V GS = 5.0 V, I D = 9 A 2.25 nC Gate-Drain Charge Q gd 4.2 Gate Resistance R g 0.5 1.5 2.6 /C0087 Turn-On Delay Time t d(on) Rise Time t r V DD = 15 V, R L = 15 /C0087 Turn-Off Delay Time t d(off) V DD = 15 V R L = 15 /C0087 I D /C0094 1 A, V GEN = 10 V, R G = 6 /C0087 ns Fall Time t f Source-Drain Reverse Recovery Time t rr I F = 2.3 A, di/dt = 100 A//C0109s Notes a. Pulse test; pulse width /C0118 300 /C0109s, duty cycle /C0118 2%. b. Guaranteed by design, not subject to production testing. 4800 Shenzhen Tuofeng Semiconductor Technology Co., Ltd

TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 012345 - On-Resistance (r DS(on) /C0087) 200 400 600 800 1000 1200 0 5 10 15 20 25 30 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 02468 1 0 0 3 6 9 12 15 0.00 0.03 0.06 0.09 0.12 0.15 0 8 16 24 32 40 V GS = 10 thru 5 V T C = 125/C0095C -55/C0095C V DS - Drain-to-Source Voltage (V) C rss C oss C iss V DS = 15 V I D = 9 A I D - Drain Current (A) V GS = 10 V I D = 9 A V GS = 10 V V GS = 4.5 V 3 V 25/C0095C 4 V Output Characteristics Transfer Characteristics Gate Charge On-Resistance vs. Drain Current V DS - Drain-to-Source Voltage (V) - Drain Current (A)I D V GS - Gate-to-Source Voltage (V) - Drain Current (A)I D - Gate-to-Source Voltage (V) Q g - Total Gate Charge (nC) C - Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature T J - Junction Temperature (/C0095C) (Normalized) - On-Resistance (r DS(on) /C0087) 4800 Shenzhen Tuofeng Semiconductor Technology Co., Ltd

TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 0.01 10 300.1 Time (sec) 0.00 0.04 0.08 0.12 0.16 0.20 02468 1 0 T J = 150/C0095C T J = 25/C0095C I D = 9 A Threshold Voltage Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power - On-Resistance (r DS(on) /C0087) V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) - Source Current (A)I S Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 0.1 0.01 1 10 60010 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 125/C0095C/W 3. T JM - T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM -1.0 -0.8 -0.6 -0.4 -0.2 -0.0 0.2 0.4 0.6 -50 -25 0 25 50 75 100 125 150 I D = 250 /C0109A Variance (V)V GS(th) T J - Temperature (/C0095C) Power (W) 4800 Shenzhen Tuofeng Semiconductor Technology Co., Ltd