4622

4622 TUOFENG | Alldatasheet

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Technical content

Symbol Max p-channel Units VDS V VGS V IDM IAR A EAR mJ TJ, TSTG ° C Symbol Device Typ Max Units n-ch 48 62.5 ° C/W n-ch 74 110 ° C/W R θJL n-ch 35 40 ° C/W p-ch 48 62.5 ° C/W p-ch 74 110 ° C/W R θJL p-ch 35 40 ° C/WMaximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s R θJA Maximum Junction-to-Ambient A Steady-State -25 Power Dissipation TA=25° C PD Steady-State Junction and Storage Temperature Range A Continuous Drain Current AF TA=25° C ID Pulsed Drain Current B W 6.4 -6.4 Absolute Maximum Ratings T A=25° C unless otherwise noted Parameter Max n-channel 20 -20 ±12 Drain-Source Voltage ±16Gate-Source Voltage Thermal Characteristics: n-channel and p-channel -55 to 150-55 to 150 Maximum Junction-to-Lead C Steady-State Parameter Maximum Junction-to-Ambient A t ≤ 10s R θJA Maximum Junction-to-Ambient A Avalanche Current B Repetitive avalanche energy 0.3mH B N and P-Channel Enhancement Mode Power MOSFET

Description

The 4622 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features

• N-Channel V DS = 20V,I D =6.4A R DS(ON) < 23mΩ @ V GS
• P-Channel V DS = -20V,I D = -6.4A R DS(ON) < 40mΩ @ V GS
• High power and current handing capability
• Lead free product is acquired
• Surface mount package N-channel P-channel SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4622 R DS(ON) < 30mΩ @ V GS =2.5V R DS(ON) < 50mΩ @ V GS =-2.5V Equivalent Circuit MARKING 4622 o TFCYWP Y :year code W :week code SOP-8 =4.5V =-4.5V Page v 1 . 0 www.sztuofeng.com

I GSS 100 nA V GS(th) 0.6 1.25 2 V I D(ON) 35 A Ω g FS 17 S V SD 0.7 1 V I S 3 A C iss 900 1100 pF C oss 162 pF C rss 105 pF R g 0.9 1.35 Ω Q g (10V) 15 18 nC Q g (4.5V) 7.2 9 nC Q gs 1.8 nC Q gd 2.8 nC t D(on) 4.5 ns t r 9.2 ns t D(off) 18.7 ns t f 3.3 ns t rr 18 ns Q rr 9.5 nC N-Channel Electrical Characteristics (T J =25° C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =250µA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =16V, V GS =0V uA Gate-Body leakage current V DS =0V, V GS =±16V Gate Threshold Voltage V DS GS I D =250µA On state drain current V GS =4.5V, V DS =5V R DS(ON) Static Drain-Source On-Resistance V GS =2.5V, I D =4.5A V GS =4.5V, I D =6.4A Forward Transconductance V DS =5V, I D =6.4A Diode Forward Voltage I S =1A Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =10V, f=1MHzOutput Capacitance Reverse Transfer Capacitance Gate resistance V GS =0V, V DS =0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge V GS =10V, V DS =10V, I D =6.5ATotal Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime V GS =10V, V DS =10V, R L =1.4Ω , R GEN =3Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery TimeI F =6.4A, dI/dt=100A/µs Body Diode Reverse Recovery ChargeI F =6.4A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25° C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. RθJL and R θJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25° C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev5: Nov 2010 15 23 Ω m 3020 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4622 Page v 1 . 0 www.sztuofeng.com

-20 V I GSS ±100 nA V GS(th) -1.3 -0.9 -0.5 V I D(ON) -25 A g FS 13 S V SD -0.76 -1 V I S -2.5 A C iss 800 960 pF C oss 131 pF C rss 103 pF R g 6.7 10 Ω Q g (10V) 15.5 nC Q g (4.5V) 7.4 nC Q gs 1.3 nC Q gd 2.9 nC t D(on) 4.4 ns t r 7.6 ns t D(off) 44 ns t f 13.5 ns t rr 20 ns Q rr 9 nC P-Channel Electrical Characteristics (T J =25° C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =-250µA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =-16V, V GS =0V µA Gate-Body leakage current V DS =0V, V GS =±12V Gate Threshold Voltage V DS GS I D =-250µA On state drain current V GS =-4.5V, V DS =-5V R DS(ON) Static Drain-Source On-ResistanceV GS =-4.5V, I D =-6.4A m Ω V GS =-2.5V, I D =-4.5A Forward Transconductance V DS =-5V, I D =-5A Diode Forward Voltage I S =-1A,V GS =0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =-10V, f=1MHzOutput Capacitance Reverse Transfer Capacitance Gate resistance V GS =0V, V DS =0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge (10V) V GS =-4.5V, V DS =-10V, I D =-4.5ATotal Gate Charge (4.5V) Gate Source Charge Gate Drain Charge Turn-On DelayTime V GS =-4.5V, V DS =-10V, R L =2Ω , R GEN =3Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time I F =-5A, dI/dt=100A/µs Body Diode Reverse Recovery ChargeI F =-5A, dI/dt=100A/µs A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The SOA curve provides a single pulse rating. A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. R θJL and R θJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev5: Nov 2010 4030 m Ω 5040 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4622 Page v 1 . 0 www.sztuofeng.com

v 1 . 0 Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4622