4616

4616 TUOFENG | Alldatasheet

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Technical content

v 1 . 0 N and P-Channel Enhancement Mode Power MOSFET

Description

The 4616 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features

• N-Channel V DS = 30V,I D =8.0A R DS(ON) < 19mΩ @ V GS =10V
• P-Channel V DS = -30V,I D = -7.0A R DS(ON) < 29mΩ @ V GS =-10V
• High power and current handing capability
• Lead free product is acquired
• Surface mount package Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V T A =25℃ 8.0 -7.0 Continuous Drain Current I D A Pulsed Drain Current (Note 1) I DM 30 -30 A Maximum Power Dissipation T A =25℃ P D 2.0 2.0 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) R θJA N-Ch 62.5 /W℃ Thermal Resistance,Junction-to-Ambient (Note2) R θJA P-Ch 62.5 /W℃ SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4616 R DS(ON) < 25mΩ @ V GS =4.5V R DS(ON) < 38mΩ @ V GS =-4.5V www.sztuofeng.com N-channel P-channel Equivalent Circuit MARKING 4616 o TFCYWP Y :year code W :week code SOP-8

v 1 . 0 A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 - V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V - - 1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1.2 1.6 2.4 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =8A - 17 19 mΩ Forward Transconductance g FS V DS =5V,I D =8A 15 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 740 - PF Output Capacitance C oss - 110 - PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 82 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 5.0 - nS Turn-on Rise Time t r - 3.5 - nS Turn-Off Delay Time t d(off) - 19 - nS Turn-Off Fall Time t f V DD =15V, R L =2.5Ω V GS =10V,R GEN =3Ω - 3.5 - nS Total Gate Charge Q g - 15 - nC Gate-Source Charge Q gs - 7.5 - nC Gate-Drain Charge Q gd V DS =15V,I D =8A, V GS =10V - 3.5 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =8A - 0.75 1.0 V SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4616 www.sztuofeng.com V GS =4.5V, I D =6A - 21 25 mΩ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production

v 1 . 0 VDC Ig Vds DUT VDC Vgs Vgs 10V Qg Qgs Qgd Charge Gate Charge Test Circuit & Waveform VDC DUT Vdd Vgs Vds Vgs RL Rg Vgs Vds 10% 90% Resistive Switching Test Circuit & Waveforms t t rd(on) t on t d(off) t f t off Vdd Vgs Id Vgs Rg DUT VDC L Vgs Vds Id Vgs BV I Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Ig Vgs VDC DUT L Vds Vgs Vds IsdIsd Diode Recovery Test Circuit & Waveforms Vds - Vds + IF AR DSS E = 1/2 LI dI/dt IRM rr VddVdd Q = - Idt ARAR trr SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4616 www.sztuofeng.com

v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4616 www.sztuofeng.com A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -30 - V Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D Drain-Source On-State Resistance R DS(ON) V GS =-10V, I D =-7.0A - 26 29 mΩ Forward Transconductance g FS V DS =-5V,I D =-7.0A 10 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1040 - PF Output Capacitance C oss - 180 - PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz - 125 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 - nS Turn-on Rise Time t r - 5.5 - nS Turn-Off Delay Time t d(off) - 26 - nS Turn-Off Fall Time t f V DD =-15V, R L =2.3Ω V GS =-10V,R GEN =6Ω - 9 - nS Total Gate Charge Q g - 19 - nC Gate-Source Charge Q gs - 3.6 - nC Gate-Drain Charge Q gd V DS =-15V,I D =-7.0A V GS =-10V - 4.6 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S V GS =-4.5V, I D =-5.0A - 34 38 mΩ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production

SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4616 VDC Ig Vds DUT VDC Vgs Vgs Qg Qgs Qgd Charge Gate Charge Test Circuit & Waveform + - -10V Vdd Vgs Id Vgs Rg DUT VDC Vgs Vds Id Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms Vds L E = 1/2 LIARAR BV DSS IAR Ig Vgs VDC DUT L Vgs Isd Diode Recovery Test Circuit & Waveforms Vds - Vds + dI/dt RM rr VddVdd Q = - Idt t rr -Isd -Vds F VDC DUT Vdd Vgs Vds Vgs RL Rg Resistive Switching Test Circuit & Waveforms Vgs Vds t t t t t t 90% 10% r on d(off) f off d(on) Page v 1 . 0 www.sztuofeng.com

v 1 . 0 Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4616 www.sztuofeng.com