4612

4612 TUOFENG | Alldatasheet

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Technical content

Symbol Max p-channel Units V DS V V GS V I DM T J , T STG Symbol Device Typ Max Units n-ch 48 62.5 °C/W n-ch 74 110 °C/W R θJL n-ch 35 60 °C/W p-ch 48 62.5 °C/W p-ch 74 110 °C/W R θJL p-ch 35 40 °C/WMaximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s R θJA Maximum Junction-to-Ambient A Steady-State -20 Power Dissipation T A =25°C P D Steady-State Junction and Storage Temperature Range A Continuous Drain Current A T A =25°C I D Pulsed Drain Current B W 4.5 -3.2 Absolute Maximum Ratings T A =25°C unless otherwise noted Parameter Max n-channel 60 -60 ±20 Drain-Source Voltage ±20Gate-Source Voltage Thermal Characteristics: n-channel and p-channel -55 to 150-55 to 150 Maximum Junction-to-Lead C Steady-State Parameter Maximum Junction-to-Ambient A t ≤ 10s R θJA Maximum Junction-to-Ambient A N and P-Channel Enhancement Mode Power MOSFET

Description

The 4612 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features

• N-Channel V DS = 60V,I D =4.5A R DS(ON) < 55mΩ @ V GS =10V
• P-Channel V DS = -30V,I D = -4.9A R DS(ON) < 70mΩ @ V GS =-10V
• High power and current handing capability
• Lead free product is acquired
• Surface mount package R DS(ON) < 60mΩ @ V GS =4.5V R DS(ON) < 90mΩ @ V GS =-4.5V N-channel P-channel Equivalent Circuit MARKING 4612 o TFCYWP Y :year code W :week code SOP-8 Page v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4612 www.sztuofeng.com

I GSS 100 nA V GS(th) 1 2.1 3 V I D(ON) 20 A 46 55 50 60 mΩ g FS 11 S V SD 0.74 1 V I S C iss 450 540 pF C oss 60 pF C rss 25 pF R g 1.65 2 Ω Q g (10V) 8.5 10.5 nC Q g (4.5V) 4.3 5.5 nC Q gs 1.6 nC Q gd 2.2 nC t D(on) 4.7 7 ns t r 2.3 4.5 ns t D(off) 15.7 24 ns t f 1.9 4 ns t rr 27.5 35 ns Q rr 32 nC Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Body Diode Reverse Recovery Charge Total Gate Charge I F =4.5A, dI/dt=100A/µs Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time I F =4.5A, dI/dt=100A/µs Input Capacitance N Channel Electrical Characteristics (T J =25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =250µA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =48V, V GS =0V µA Gate-Body leakage current V DS =0V, V GS = ±20V Gate Threshold Voltage V DS GS I D =250µA On state drain current V GS =10V, V DS =5V R DS(ON) Static Drain-Source On-Resistance Forward Transconductance mΩ V GS =4.5V, I D =3A V DS =5V, I D =4.5A I S =1A,V GS =0V V GS =10V, I D =4.5A Diode Forward Voltage V GS =10V, V DS =30V, R L =6.7Ω, R GEN =3Ω Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Total Gate Charge V GS =10V, V DS =30V, I D =4.5A V GS =0V, V DS =30V, f=1MHz V GS =0V, V DS =0V, f=1MHz SWITCHING PARAMETERS Reverse Transfer Capacitance Gate resistance Output Capacitance A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 Page v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4612 www.sztuofeng.com

-60 V I GSS ±100 nA V GS(th) -1 -2.1 -3 V I D(ON) -20 A 75 80 85 90 mΩ g FS V SD -0.73 -1 V I S -3 A C iss 930 1120 pF C oss 85 pF C rss 35 pF R g 7.2 9 Ω Q g (10V) 16 20 nC Q g (4.5V) 81 0 n C Q gs 2.5 nC Q gd 3.2 nC t D(on) 81 2 n s t r 3.8 7.5 ns t D(off) 31.5 48 ns t f 7.5 15 ns t rr 27 35 ns Q rr 32 nC Body Diode Reverse Recovery Time I F =-3.2A, dI/dt=100A/µs Body Diode Reverse Recovery Charge I F =-3.2A, dI/dt=100A/µs Turn-On DelayTime V GS =-10V, V DS =-30V, R L =9.4Ω, R GEN =3Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge SWITCHING PARAMETERS Total Gate Charge (10V) V GS =-10V, V DS =-30V, I D =-3.2A Reverse Transfer Capacitance Gate resistance DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =-30V, f=1MHz V GS =0V, V DS =0V, f=1MHz Diode Forward Voltage I S =-1A,V GS =0V Maximum Body-Diode Continuous Current Output Capacitance V DS =-5V, I D =-3.2A R DS(ON) Static Drain-Source On-Resistance Forward Transconductance V GS =-10V, I D =-3.2A mΩ V GS =-4.5V, I D =-2.8A Gate Threshold Voltage V DS GS I D =-250µA On state drain current V GS =-10V, V DS =-5V µA Gate-Body leakage current V DS =0V, V GS =±20V Drain-Source Breakdown Voltage I D =-250µA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =-48V, V GS =0V P-Channel Electrical Characteristics (T J =25°C unless otherwise noted) Parameter Conditions STATIC PARAMETERS A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev2: August 2005 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Page v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4612 www.sztuofeng.com

v 1 . 0 Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4612