4611

4611 TUOFENG | Alldatasheet

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Technical content

Symbol Max p-channel Units VDS V VGS V IDM TJ, TSTG ° C Symbol Device Typ Max Units n-ch 48 62.5 ° C/W n-ch 74 110 ° C/W R θJL n-ch 35 60 ° C/W p-ch 48 62.5 ° C/W p-ch 74 110 ° C/W R θJL p-ch 35 40 ° C/WMaximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t ≤ 10s R θJA Maximum Junction-to-Ambient A Steady-State -30 Power Dissipation TA=25° C PD Steady-State Junction and Storage Temperature Range A Continuous Drain Current A TA=25° C ID Pulsed Drain Current B W 6.3 -4.9 Absolute Maximum Ratings T A=25° C unless otherwise noted Parameter Max n-channel 60 -60 ±20 Drain-Source Voltage ±20Gate-Source Voltage Thermal Characteristics: n-channel and p-channel -55 to 150-55 to 150 Maximum Junction-to-Lead C Steady-State Parameter Maximum Junction-to-Ambient A t ≤ 10s R θJA Maximum Junction-to-Ambient A N and P-Channel Enhancement Mode Power MOSFET

Description

The 4611 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features

• N-Channel V DS = 60V,I D =6.3A R DS(ON) < 35mΩ @ V GS =10V
• P-Channel V DS = -60V,I D = -4.9A R DS(ON) < 60mΩ @ V GS =-10V
• High power and current handing capability
• Lead free product is acquired
• Surface mount package Schematic diagram Marking and pin assignment SOP-8 top view N-channel P-channel R DS(ON) < 45mΩ @ V GS =4.5V R DS(ON) < 72mΩ @ V GS =-4.5V Page v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4611 www.sztuofeng.com

I GSS 100 nA V GS(th) 1.5 2.1 3 V I D(ON) 40 A Ω g FS 27 S V SD 0.74 1 V I S 3 A C iss 1920 2300 pF C oss 155 pF C rss 116 pF R g 0.65 0.8 Ω Q g (10V) 47.6 58 nC Q g (4.5V) 24.2 30 nC Q gs 6 nC Q gd 14.4 nC t D(on) 7.6 ns t r 5 ns t D(off) 28.9 ns t f 5.5 ns t rr 33.2 40 ns Q rr 43 nC Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Body Diode Reverse Recovery Charge Total Gate Charge I F =6.3A, dI/dt=100A/µs Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time I F =6.3A, dI/dt=100A/µs Input Capacitance N Channel Electrical Characteristics (T J =25° C unless otherwise noted) Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage I D =250µA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =48V, V GS =0V µA Gate-Body leakage current V DS =0V, V GS = ±20V Gate Threshold Voltage V DS GS I D =250µA On state drain current V GS =10V, V DS =5V R DS(ON) Static Drain-Source On-Resistance Forward Transconductance m Ω V GS =4.5V, I D =5.7A V DS =5V, I D =6.3A I S =1A,V GS =0V V GS =10V, I D =6.3A Diode Forward Voltage V GS =10V, V DS =30V, R L =4.7Ω , R GEN =3Ω Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Total Gate Charge V GS =10V, V DS =30V, I D =6.3A V GS =0V, V DS =30V, f=1MHz V GS =0V, V DS =0V, f=1MHz SWITCHING PARAMETERS Reverse Transfer Capacitance Gate resistance Output Capacitance A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The SOA curve provides a single pulse rating. Rev5: Nov. 2010 4540 Page v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4611 www.sztuofeng.com

-60 V I GSS ±100 nA V GS(th) -1.5 -1.9 -3 V I D(ON) -30 A Ω g FS 17.8 S V SD -0.73 -1 V I S -3 A C iss 2417 2900 pF C oss 179 pF C rss 120 pF R g 1.9 2.3 Ω Q g (10V) 45.2 55 nC Q g (4.5V) 22.8 28 nC Q gs 5.8 nC Q gd 9.6 nC t D(on) 9.8 ns t r 6.1 ns t D(off) 44 ns t f 12.7 ns t rr 32 42 ns Q rr 42 nC Body Diode Reverse Recovery Time I F =-4.9A, dI/dt=100A/µs Body Diode Reverse Recovery ChargeI F =-4.9A, dI/dt=100A/µs Turn-On DelayTime V GS =-10V, V DS =-30V, R L =6.2Ω , R GEN =3Ω Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Total Gate Charge (4.5V) Gate Source Charge Gate Drain Charge SWITCHING PARAMETERS Total Gate Charge (10V) V GS =-10V, V DS =-30V, I D =-4.9A Reverse Transfer Capacitance Gate resistance DYNAMIC PARAMETERS Input Capacitance V GS =0V, V DS =-30V, f=1MHz V GS =0V, V DS =0V, f=1MHz Diode Forward Voltage I S =-1A,V GS =0V Maximum Body-Diode Continuous Current Output Capacitance V DS =-5V, I D =-4.9A R DS(ON) Static Drain-Source On-Resistance Forward Transconductance V GS =-10V, I D =-4.9A m Ω V GS =-4.5V, I D =-4.4A Gate Threshold Voltage V DS GS I D =-250µA On state drain current V GS =-10V, V DS =-5V µA Gate-Body leakage current V DS =0V, V GS =±20V Drain-Source Breakdown Voltage I D =-250µA, V GS =0V I DSS Zero Gate Voltage Drain Current V DS =-48V, V GS =0V P-Channel Electrical Characteristics (T J =25° C unless otherwise noted) Parameter Conditions STATIC PARAMETERS A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The SOA curve provides a single pulse rating. A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25° C. The SOA curve provides a single pulse rating. Rev5: Nov. 2010 6055 7268 m Page v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4611 www.sztuofeng.com

v 1 . 0 Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4611