4606 TUOFENG | Alldatasheet

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Technical content

v 1 . 0 N and P-Channel Enhancement Mode Power MOSFET

Description

The 4606 uses advanced trench technology to provide excellent R DS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features

  • N-Channel V DS = 30V,I D =6.9A R DS(ON) < 21mΩ @ V GS =10V
  • P-Channel V DS = -30V,I D = -6.0A R DS(ON) < 45mΩ @ V GS =-10V
  • High power and current handing capability
  • Lead free product is acquired
  • Surface mount package Schematic diagram Marking and pin assignment SOP-8 top view Absolute Maximum Ratings (T A =25℃unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 30 -30 V Gate-Source Voltage V GS ±20 ±20 V T A =25℃ 6.9 -6.0 Continuous Drain Current I D A Pulsed Drain Current (Note 1) I DM 28 -26 A Maximum Power Dissipation T A =25℃ P D 2.0 2.0 W Operating Junction and Storage Temperature Range T J STG -55 To 150 -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note2) R θJA N-Ch 63.5 /W℃ Thermal Resistance,Junction-to-Ambient (Note2) R θJA P-Ch 63.5 /W℃ N-channel P-channel SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4606 R DS(ON) < 32mΩ @ V GS =4.5V R DS(ON) < 60mΩ @ V GS =-4.5V www.sztuofeng.com

v 1 . 0 A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 - V Zero Gate Voltage Drain Current I DSS V DS =24V,V GS =0V - - 50 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 1.2 1.6 2.4 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =6.9A - 19 21 mΩ Forward Transconductance g FS V DS =5V,I D =5.0A 5 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 398 - PF Output Capacitance C oss - 67 - PF Reverse Transfer Capacitance C rss V DS =15V,V GS =0V, F=1.0MHz - 61 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 8.0 - nS Turn-on Rise Time t r - 11.5 - nS Turn-Off Delay Time t d(off) - 17 - nS Turn-Off Fall Time t f V DD =15V, R L =15 Ω V GS =10V,R GEN =6Ω - 7.5 - nS Total Gate Charge Q g - 7.5 - nC Gate-Source Charge Q gs - 1.7 - nC Gate-Drain Charge Q gd V DS =10V,I D =1.0A, V GS =10V - 1.3 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =2A - 0.75 1.0 V www.sztuofeng.com V GS =4.5V, I D =5A - 29 32 mΩ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production I D =1.0A SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4606

v 1 . 0 www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4606 Characteristics Curve(N-Channel) 5.0A

v 1 . 0 www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4606 Characteristics Curve(N-Channel)

v 1 . 0 www.sztuofeng.com A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -30 - V Zero Gate Voltage Drain Current I DSS V DS =-24V,V GS =0V - - -50 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D Drain-Source On-State Resistance R DS(ON) V GS =-10V, I D =-6.0A - 42 45 mΩ Forward Transconductance g FS V DS =-5V,I D =-5.0A 10 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 930 - PF Output Capacitance C oss - 121 - PF Reverse Transfer Capacitance C rss V DS =-15V,V GS =0V, F=1.0MHz - 102 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 9.5 - nS Turn-on Rise Time t r - 5.4 - nS Turn-Off Delay Time t d(off) - 42.5 - nS Turn-Off Fall Time t f V DD =-15V, R L =5.0Ω V GS =-10V,R GEN =6Ω - 13.6 - nS Total Gate Charge Q g - 20 - nC Gate-Source Charge Q gs - 4.1 - nC Gate-Drain Charge Q gd V DS =-15V,I D =-3.0A V GS =-10V - 2.6 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S V GS =-4.5V, I D =-5.0A - 55 60 mΩ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2 . % 4. Guaranteed by design, not subject to production I D =-3.0A SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4606

v 1 . 0 www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4606 Characteristics Curve(P-Channel) -4.0A

v 1 . 0 www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4606 Characteristics Curve(P-Channel)

v 1 . 0 Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° www.sztuofeng.com SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4606