4435B TUOFENG | Alldatasheet
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Technical content
v 1 . 0 P-Channel Enhancement Mode Power MOSFET
Description
The 4435B uses advanced trench technology to provide excellent R DS , low gate charge and operation with gate voltages as low as 4.5V. (ON) (ON) (ON) General Features
- V S = -30V D R DS < 33mΩ @ V GS =-4.5V R DS < 25mΩ @ V GS =-10V High power and current handing capability Lead free product is acquired Surface mount package Application
- Battery Switch Load switch Power management bsolute Maximum Ratings (T A =25℃unless otherwise noted) bol Limit Unit A Parameter Sym Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V T A =25℃ Continuous Drain Current (T J =150℃) I D A Drain Current-Pulsed (Note 1) I DM A -40 Maximum Power Dissipation P D 2.1 W Operating Junction and Storage Temperature Range T G -55 50 J ST To 1 ℃ Thermal Characteristic -Ambient (Note 2) R θJA 43 /W℃ Thermal Resistance,Junction-to = -8.0A D I = -5.0A D I SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4435B SOP-8 Equivalent Circuit MARKING 4435B o TFCYWP Y :year code W :week code SD S D SD G D Top View S G D
v 1 . 0 Parameter Symbol Con dition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -1 V GS =-10V, I D =-8.0A - 22 25 mΩ Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-5.0A - 30 33 mΩ Forward Transconductance g FS DS =-15V,I D =-8.0A 0 - - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1600 - PF Output Capacitance C oss - 350 - PF Reverse Transfer Capacitance V DS =-15V,V GS =0V, C rss F=1.0MHz - 300 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 - nS Turn-on Rise Time t r - 15 - nS Turn-Off Delay Time t d (off) 110 - nS Turn-Off Fall Time t f V DD =-15V, ID=-1A, V GS =-10V,R GEN =6Ω 70 - nS Total Gate Charge Q g - 30 - nC Gate-Source Charge Q gs - 5.5 - nC Gate-Drain Charge Q gd V DS =-15V,I D =-8.0A V GS =-10V - 8 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-2.1A - - -1.2 V Notes: Rating: Pulse width limited by maximum junction temperature. 1. Repetitive 2. Surface Mounted on FR4 Board, t ≤ 10 sec. ≤ 2%. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle 4. Guaranteed by design, not subject to production -2.2 V1.5 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4435B Electrical Characteristics (T A =25℃unless otherwise noted)
v 1 . 0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOP-8 Plastic-Encapsulate MOSFETS 4435B Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8°