4435 TUOFENG | Alldatasheet

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FEATURES

/C0068TrenchFET/C0114 Power MOSFET /C0068Advanced High Cell Density Process /C0068Lead (Pb)-Free Version is RoHS Compliant

APPLICATIONS

/C0068Load Switches /C0068Battery Switch Available 4435 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (/C0087) ID (A) −30 0.020 @ VGS = −10 V −8.0 −30 SD S D SD G D SO-8 Top View S G D P-Channel MOSFET Ordering Information: 4435 ABSOLUTE MAXIMUM RATINGS (TA = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Unit Drain-Source Voltage VDS −30 V Gate-Source Voltage VGS /C003420 V Continuous Drain Current (TJ = 150/C0095C)a TA = 25/C0095C ID −8.0 Continuous Drain Current (TJ = 150/C0095C)a ID A Pulsed Drain Current IDM −50 A continuous Source Current (Diode Conduction)a IS −2.1 −1.25 Maximum Power Dissipationa TA = 25/C0095C PD 2.5 1.5 WMaximum Power Dissipationa TA = 70/C0095C PD 1.6 0.9 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 /C0095C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J t i t A b it a t /C0118 10 sec R 40 50 Maximum Junction-to-Ambienta Steady State RthJA 70 85 /C0095C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 18 22 C/W Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Shenzhen Tuofeng Semiconductor Technology Co., Ltd

SPECIFICATIONS (TJ = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = −250 /C0109A −1 −2.2 V Gate-Body Leakage IGSS VDS = 0 V, VGS = /C003420 V /C0034100 nA Zero Gate Voltage Drain Current IDSS VDS = −24 V, VGS = 0 V −100 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = −5 V, VGS = −10 V −40 A Drain Source On State Resistancea rDS( ) VGS = −10 V, ID = −8.0 A 0.015 0.020 /C0087Drain-Source On-State Resistancea rDS(on) VGS = −4.5 V, ID = −5.0 A 0.025 0.030 /C0087 Forward Transconductancea gfs VDS = −10 V, ID = −9.1 A 24 S Diode Forward Voltagea VSD IS = −3.0 A, VGS = 0 V −0.8 −1.28 V Dynamicb Total Gate Charge Qg 33 70 Gate-Source Charge Qgs VDS = −15 V, VGS = −10 V, ID = −9.1 A 5.8 nC Gate-Drain Charge Qgd 8.6 Turn-On Delay Time td(on) 10 15 Rise Time tr VDD = −15 V, RL = 15 /C0087 15 25 Turn-Off Delay Time td(off) VDD = −15 V, RL = 15 /C0087 ID /C0094 −1 A, VGEN = −10 V, RG = 6 /C0087 110 170 ns Fall Time tf 70 110 Source-Drain Reverse Recovery Time trr IF = −2.1 A, di/dt = 100 A//C0109s 60 90 Notes a. Pulse test; pulse width /C0118 300 /C0109s, duty cycle /C0118 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 012345 VGS = 10 thru 6 V TC = −55/C0095C 125/C0095C 25/C0095C Output Characteristics Transfer Characteristics VDS − Drain-to-Source Voltage (V) − Drain Current (A)I D VGS − Gate-to-Source Voltage (V) − Drain Current (A)I D 3 V 4 V 5 V Shenzhen Tuofeng Semiconductor Technology Co., Ltd nA

TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) rDS(on) − On-Resiistance (Normalized) − On-Resistance (rDS(on) /C0087) 600 1200 1800 2400 0 5 10 15 20 25 30 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0 1 02 03 04 0 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 0 1 02 03 04 05 0 VDS − Drain-to-Source Voltage (V) Coss Ciss VDS = 15 V ID = 9.1 A ID − Drain Current (A) VGS = 10 V ID = 9.1 A VGS = 4.5 V Gate Charge On-Resistance vs. Drain Current − Gate-to-Source Voltage (V) Qg − Total Gate Charge (nC) C − Capacitance (pF) V GS Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (/C0095C) 0.00 0.02 0.04 0.06 0.08 0.10 02468 1 0 TJ = 150/C0095C ID = 9.1 A Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage − On-Resistance (rDS(on) /C0087) VSD − Source-to-Drain Voltage (V) V GS − Gate-to-Source Voltage (V) − Source Current (A)I S TJ = 25/C0095C Crss VGS = 10 V Shenzhen Tuofeng Semiconductor Technology Co., Ltd

TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) Power (W) Single Pulse Power Time (sec) 10−3 10−2 1 10 60010−110−4 100 −0.4 −0.2 0.0 0.2 0.4 0.6 −50 −25 0 25 50 75 100 125 150 ID = 250 /C0109A 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage Variance (V)VGS(th) TJ − Temperature (/C0095C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70/C0095C/W 3. TJM − TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM 1 100 600 1010−110−2 Safe Operating Area, Junction-to-Ambient VDS − Drain-to-Source Voltage (V) 100 0.1 1 10 100 0.01 TA = 25/C0095C Single Pulse − Drain Current (A)I D P(t) = 10 dc 0.1 IDM Limited ID(on) Limited *rDS(on) Limited BVDSS Limited P(t) = 1 P(t) = 0.1 P(t) = 0.01 P(t) = 0.001 P(t) = 0.0001 Shenzhen Tuofeng Semiconductor Technology Co., Ltd

TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 10−3 10−2 11 010−110−4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Foot Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance Shenzhen Tuofeng Semiconductor Technology Co., Ltd