2021

2021 TUOFENG | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 6

Technical content

Features

z Supper high density cell design z Excellent ON resistance z Extremely Low Threshold Voltage z Small package SOT-23/323

Applications

Pin configuration (Top view) V DS (V) Rds(on) ( ȍ) 0.310@ V GS =4.5V 0.360@ V GS =2.5V 0.460@ V GS =1.8V S D 1 2 G www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS MARKING *w：week code w 212TF Absolute Maximum ratings Parameter Symbol 10 S Unit Drain-Source Voltage V DS Gate-Source Voltage V GS V T A =25°C 0.58 0.55 Continuous Drain Current I D A T A =25°C 0.37 0.31 Maximum Power Dissipation P D W Pulsed Drain Current c I DM 1.4 A Operating Junction Temperature T J 150 °C Lead Temperature T L 260 °C Storage Temperature Range T stg -55 to 150 Steady State Thermal resistance ratings Parameter Symbol Typical Maximum Unit t ” 10 s 275 335 Junction-to-Ambient Thermal Resistance a Steady State R șJA 325 395 t ” 10 s 375 430 Junction-to-Ambient Thermal Resistance b Steady State R șJA 445 535 Junction-to-Case Thermal Resistance Steady State R șJC 260 300 °C/W

Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250uA 20 V Zero Gate Voltage Drain Current I DSS V DS =16 V, V GS = 0V 1 uA Gate-to-source Leakage Current I GSS V DS = 0 V, V GS =±5V 5 uA ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V GS = V DS , I D = 250uA 0.45 0.58 0.85 V VGS = 4.5V, ID = 0.55A 220 310 VGS = 2.5V, ID = 0.45A 260 360 Drain-to-source On-resistance R DS(on) VGS = 1.8V, ID = 0.35A 320 460 Forward Transconductance g FS VDS = 5 V, ID = 0.55A 2.0 S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C ISS Output Capacitance C OSS Reverse Transfer Capacitance C RSS V GS = 0 V, f = 100 kHz, V DS 10 V pF Total Gate Charge Q G(TOT) 1.15 Threshold Gate Charge Q G(TH) 0.06 Gate-to-Source Charge Q GS 0.15 Gate-to-Drain Charge Q GD V GS = 4.5 V, V DS = 10 V, I D = 0.55A 0.23 nC SWITCHING CHARACTERISTICS Turn-On Delay Time td(ON) 22 Rise Time tr 80 Turn-Off Delay Time td(OFF) 700 Fall Time tf 380 ns BODY DIODE CHARACTERISTICS Forward Voltage V SD V GS = 0 V, I S = 0.35A 0.5 0.7 1.5 V V DD =10V, V GS =4.5V, I D =0.55A, R G =6Ω 2021 www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS

(Ta=25 o C, unless otherwise noted) o Output characteristics Output characteristics On-Resistance vs. Drain current On-Resistance vs. Drain current On-Resistance vs. Junction temperature On-Resistance vs. Junction temperature Transfer characteristics Transfer characteristics On-Resistance vs. Gate-to-Source voltage On-Resistance vs. Gate-to-Source voltage Threshold voltage vs. Temperature Threshold voltage vs. Temperature C, unless otherwise noted) V GS = 2.5V ~5.0V 0.0 0.4 0.8 1.2 1.6 2.0 T=-50 o C V GS =2.0V V GS =1.5V IDS-Drain-to-Source Current (A) VDS-Drain-to-Source Voltage(V) T=25 o C T=125 o C I DS -Drain to Source Current(A) V GS -Gate-to-Source Voltage(V) V DS =5V 100 150 200 250 300 350 400 V GS =4.5V V GS =1.8V V GS =2.5V RDS(on)- On-Resistance(m IDS-Drain-to-Source Current(A) 400 800 1200 1600 RDS(on)- On-Resistance (m VGS-Gate-to-Source Voltage(V) -50 -25 0 25 50 75 100 125 150 120 160 200 240 280 320 VGS=4.5V, ID=0.55A -50 -25 0 25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 I D =250uA V GS(TH) Gate Threshold Voltage (V) Temperature ( o R DS(on) - On-Resistance (m Temperature( o 2021 www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS

0.2 0.4 0.6 0.8 T=25 o C Body diode forward voltage Safe operating power Transient thermal response (Junction-to-Ambient) T=150 o C V SD -Source-to-Drain Voltage(V) I SD -Source to Drain Current(A) 02468 1 0 V GS =0V F=100kHz Ciss Coss Crss C - Capacitance(pF) V DS Drain-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) 0.1 0.1 1 10 100 0.001 - Drain Current (A)I D 0.01 T A = 25 °C Single Pulse 10 ms 100 ms DC 1 s 10 s Limited by R DS(on) 00601110 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized EffectiveTransient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 325 °C/W 3. T JM - T A = P DM Z thJA(t) t t t t Notes: 4. Surface Mounted P DM 2021 www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° 2021

A0 .900 1.100 0.035 0.043 A1 0.000 0.100 0.000 0.004 A2 0.900 1.000 0.035 0.039 b 0.200 0.400 0.008 0.016 c 0.080 0.150 0.003 0.006 D 2.000 2.200 0.079 0.087 E 1.150 1.350 0.045 0.053 E1 2.150 2.450 0.085 0.096 e e1 1.200 1.400 0.047 0.055 L L1 0.260 0.460 0.010 0.018 /g537 0 °8 °0 °8 ° 0.525 REF 0.021 REF Symbol Dimensions In Millimeters Dimensions In Inches 0.650 TYP 0.026 TYP /g54/g50/g55/g16/g22/g21/g22/g3/g51/g68/g70/g78/g68/g74/g72/g3/g50/g88/g87/g79/g76/g81/g72/g3/g39/g76/g80/g72/g81/g86/g76/g82/g81/g86/g3 /g54/g50/g55/g16/g22/g21/g22 /g54/g88/g74/g74/g72/g86/g87/g72/g71/g3/g51/g68/g71/g3/g47/g68/g92/g82/g88/g87 /g3 www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS 2021