2016 TUOFENG | Alldatasheet

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V DS V GS I DM T J , T STG Symbol Ty p Max 70 90 100 125 R θJL 63 80 W Maximum Junction-to-Lead C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W ±12Gate-Source Voltage Drain-Source Voltage 20 Continuous Drain Current A Maximum UnitsParameter T A =25°C Absolute Maximum Ratings T A =25°C unless otherwise noted V V 15Pulsed Drain Current B Power Dissipation A T A =25°C Junction and Storage Temperature Range A P D 1.25 -55 to 150 I D 4.2 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS 2016 V(BR)DSS RDS(on)MAX ID 20V 0.030Ω@4.5V 4.2A 0.040Ω@2.5V N-Channel 20-V D-S MOSFET GeneralFEATURE APPLICATION

  • Load SwitchforPortable Devices
  • DC/DCConverter SOT-23 MARKING EquivalentCircuit 1.GATE 2.SOURCE 3.DRAIN *w：week code w
  • TrenchFETPower MOSFET
  • Lead freeproductis acquired
  • Surfacemountpackage AE9TF www.sztuofeng.com Feb,2018 V1.01 2016

I GSS 100 nA V GS(th) 0.4 0.6 1 V I D(ON) 15 A mΩ g FS 8 S V SD 0.76 1.2 V I S C iss 436 pF C oss 66 pF C rss 44 pF R g 3 Ω Q g 6.2 nC Q gs 1.6 nC Q gd 0.5 nC t D(on) 5.5 ns t r 6.3 ns t D(off) 40 ns t f 12.7 ns t rr 12.3 ns Q rr 3.5 nC Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge I F =4A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current I D =250µA, V GS =0V V GS =4.5V, V DS =5V V GS =4.5V, I D =4.2A Reverse Transfer Capacitance I F =4A, dI/dt=100A/µs Electrical Characteristics (T J =25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions I DSS µA Gate Threshold Voltage V DS GS I D =250µA V DS =16V, V GS =0V V DS =0V, V GS =±12V Zero Gate Voltage Drain Current Gate-Body leakage current R DS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage mΩ V GS =2.5V, I D =3.7A I S =1A,V GS =0V V DS =5V, I D =4.2A Turn-On Rise Time Turn-Off DelayTime V GS =5V, V DS =10V, R L =2.7Ω, R GEN =6Ω Gate resistance V GS =0V, V DS =0V, f=1MHz Turn-Off Fall Time SWITCHING PARAMETERS Total Gate Charge V GS =4.5V, V DS =10V, I D =4.2AGate Source Charge Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS V GS =0V, V DS =10V, f=1MHz Gate Drain Charge A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating. Rev4 : June 2005 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS www.sztuofeng.com Feb,2018 V1.02 2016

www.sztuofeng.com Feb,2018 V1.0 SHENZHENTUOFENGSEMICONDUCTORTECHNOLOGYCO.,LTD SOT-23Plastic-EncapsulateMOSFETS SOT-23PackageOutlineDimensions SOT-23SuggestedPadLayout Symbol DimensionsInMillimeters DimensionsInInches Min Max Min Max A 0.900 1.150 0.035 0.045 0.000 0.100 0.000 0.004 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 2.250 2.550 0.089 0.100 e

0.950 TYP

0.037 TYP

1.800 2.000 0.071 0.079 L

0.550 REF

0.022 REF

0.300 0.500 0.012 0.020 θ 8° 0° 2016