15N10B TUOFENG | Alldatasheet

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Technical content

Description

The 15N10B TO-252 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. General Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Excellent package for good heat dissipation Application
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply D G S Absolute Maximum Ratings (T A =25℃℃ ℃℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D Drain Current-Pulsed (Note 1) I DM 24 A Maximum Power Dissipation P D 28 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 41.7 /W℃ Electrical Characteristics (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250µA 100 105 - V Zero Gate Voltage Drain Current I DSS V DS =100V, V GS A 900 n =0V - - VDSS RDS(ON) @10V (typ) ID 100V 104 Ω 10A m 10 A TO -252 15N10B Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.11 15N10B TFYWCP MARKING EquivalentCircuit Y :year code W :week code G S D

Gate-Body Leakage Current I GSS V GS =±20V,V DS On Characteristics (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250µ Drain-Source On-State Resistance R DS(ON) Ω Forward Transconductance g FS V DS =5V,I D =2.9A - 8 - S Dynamic Characteristics (Note4) Input Capacitance C lss - 690 - PF Output Capacitance C oss - 120 - PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz - 90 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 11 - nS Turn-on Rise Time t r - 7.4 - nS Turn-Off Delay Time t d(off) - 35 - nS Turn-Off Fall Time t f V DD =30V,I D =2A,R L =15Ω V GS =10V,R G =2.5Ω - 9.1 - nS Total Gate Charge Q g - 15.5 nC Gate-Source Charge Q gs - 3.2 - nC Gate-Drain Charge Q gd V DS =30V,I D =3A, V GS =10V - 4.7 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SD V GS =0V,I S =3A - - 1.2 V Diode Forward Current (Note 2) I S Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production m A 1 1.8 3 V =0V - - ±90 nA - - 10 A VGS=10V, ID=3A 104 130 VGS=4.5V, ID=2A 114 145 Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.12 15N10B

1）） ））E AS test circuit 2）） ））Gate charge test circuit 3）） ））Switch Time Test Circuit Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.13 15N10B

Typical Electrical and Thermal Characteristics (curves) Figure1. Source-Drain Diode Forward Voltage Figure2. Safe operating area Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance Figure6. R DS(ON) vs Junction Temperature Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.14 15N10B

Figure7. BV DSS vs Junction Temperature Figure8. V GS(th) vs Junction Temperature Figure9. Gate charge waveforms Figure10. Capacitance Figure11. Normalized Maximum Transient Thermal Impedance Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.15 15N10B

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N -CHANNEL ENHANCEMENT MODE POWER MOSFET www.sztuo eng.com Fe ,2018 V1.16

Package Information

UNIT: mm 0.25 GAUGE PLANE L VIEW A SEATING PLANE D E e H A SEE VIEW A b c SYMBOL MIN. MAX. 2.39 4.95 5.46 0.46 0.61 0.13 5.33 A c D E MILLIMETERS b 0.50 0.89

2.29 BSC

4.57 6.35 6.73 6.22

0.090 BSC

MIN. MAX. INCHES 0.094 0.020 0.035 0.195 0.215 0.018 0.024 0.210 0.180 0.250 0.265 2.18 0.245 0.086 0.005 0.035 0.070 0.410 H L e 9.40 0.90 0.46 0.89 1.78 10.41 0.370 0.035 0.018 0.040L4 1.02 0.1503.81 0.89 2.03 0.035 0.080 0 8°0° 8°0° 6.00 6.00 0.236 0.236 6.8 MIN. 3 MIN. 6.25 MIN. 6.6 1.5 MIN. 2.286 4.572 15N10B