PWFB9596 POTENS

Document overview

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Technical content

Features

Applications

 Battery Management  POL Applications  Battery Protection Applications  1-Cell Lithium-ion Battery Charging and Discharging Switch Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics CSP Dual Pin Configuration S1 G1

Potens semiconductor corp. Ver.1.03 PWFB9596 24V Dual N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVSSS Source1 - Source2 Breakdown Voltage VGS=0V , ID=250uA 24 --- --- V IS1S2 Source1 - Source2 Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=20V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±10 uA On Characteristics RSS(ON) Static Source1-Source2 On-Resistance3 VGS=4.5V , ID=3A 21 26 31 m VGS=4V , ID=3A 22 27 33 m VGS=3.7V , ID=3A 24 29 36 m VGS=3.1V , ID=3A 26 31 40 m VGS=2.5V , ID=3A 30 37 47 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.4 0.7 1.2 V gfs Forward Transconductance VDS=10V , ID=3A --- 4 --- S Dynamic and switching Characteristics Qg Total Gate Charge2,3 VDS=20V , VGS=4.5V , ID=3A --- 10.4 --- nC Qgs Gate-Source Charge2,3 --- 0.7 --- Qgd Gate-Drain Charge2,3 --- 4.3 --- Td(on) Turn-On Delay Time2,3 VDD=15V , VGS=10V , RG=6 ID=3A --- 28 --- ns Tr Rise Time2,3 --- 64 --- Td(off) Turn-Off Delay Time2,3 --- 60 --- Tf Fall Time2,3 --- 55 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 5.5 A ISM Pulsed Source Current --- --- 11 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.03 PWFB9596 24V Dual N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform Normalized Thermal Response (RΘJC) ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response TJ , Junction Temperature (℃) Qg , Gate Charge (nC) VDS , Drain to Source V oltage (V) Square Wave Pulse Duration (s)

Potens semiconductor corp. Ver.1.03 PWFB9596 24V Dual N-Channel MOSFETs CSP Dual PACKAGE INFORMATION TOP VIEW Thickness MAX = 0.15mm MAX = 0.15mm G1 S1 G2 S2 Pin1 MARK 0.3mm BOTTOM VIEW Pin1 MARK 1.33 ± 0.1 mm 1.33 ± 0.1 mm 0.65 mm 0.65 mm