PDB1216E POTENS

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 Notebook  Load Switch  Networking  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN2X2-6L Dual 1EP Pin Configuration D1/D2 D1/D2 S1 S2

Potens semiconductor corp. Ver.1.05 PDB1216E 12V Dual N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 12 --- --- V IDSS Drain-Source Leakage Current VDS=12V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=10V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±10 uA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=3A 15 19 23 m VGS=4.0V , ID=3A 16 21 25 m VGS=3.8V , ID=2A 17 22 27 m VGS=3.1V , ID=2A 18 24 30 m VGS=2.5V , ID=2A 19 26 34 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.3 0.6 1 V gfs Forward Transconductance VDS=10V , ID=1A --- 3.4 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=10V , VGS=4.5V , ID=3A --- 7 --- nC Qgs Gate-Source Charge2 , 3 --- 0.7 --- Qgd Gate-Drain Charge2 , 3 --- 1.8 --- Td(on) Turn-On Delay Time2 , 3 VDD=10V , VGS=4.5V , RG=25 ID=1A --- 2.9 --- ns Tr Rise Time2 , 3 --- 8.4 --- Td(off) Turn-Off Delay Time2 , 3 --- 19.2 --- Tf Fall Time2 , 3 --- 5.6 --- Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 370 --- pF Coss Output Capacitance --- 60 --- Crss Reverse Transfer Capacitance --- 48 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 6 A ISM Pulsed Source Current --- --- 12 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Electrical Characteristics (TJ=25 ℃, unless otherwise) noted) Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.05 PDB1216E 12V Dual N-Channel MOSFETs ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.05 PDB1216E 12V Dual N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.7 Switching Time Waveform Fig.8 EAS Waveform

Potens semiconductor corp. Ver.1.05 PDB1216E 12V Dual N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.600 0.500 0.024 0.019 A2 0.150REF 0.006REF b 0.350 0.250 0.014 0.010 D 2.050 1.950 0.081 0.076 D1 1.730 1.630 0.068 0.064 E 2.050 1.950 0.081 0.076 E1 0.950 0.850 0.037 0.033 e 0.650BSC 0.026BSC L 0.350 0.250 0.014 0.010 N 6pin 6pin DFN2X2-6L Dual 1EP PACKAGE INFORMATION