PDB39E3CZ POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  MB / VGA / Vcore  POL Applications  Load Switch  LED Application D D D S S

Potens semiconductor corp. Ver.1.02 PDB39E3CZ 30V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V IDSS Drain-Source Leakage Current VDS=-30V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-12A --- 5.1 6 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V gfs Forward Transconductance VDS=-10V , ID=-3A --- 13 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=-15V , VGS=-10V , ID=-40A --- 63 100 nC Qgs Gate-Source Charge3 , 4 --- 13 20 Qgd Gate-Drain Charge3 , 4 --- 9.5 15 Td(on) Turn-On Delay Time3 , 4 VDD=-15V , VGS=-10V , RG=6 ID=-40A --- 8 12 ns Tr Rise Time3 , 4 --- 10 15 Td(off) Turn-Off Delay Time3 , 4 --- 15 25 Tf Fall Time3 , 4 --- 20 30 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 3980 6000 pF Coss Output Capacitance --- 520 800 Crss Reverse Transfer Capacitance --- 360 550 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -80 A ISM Pulsed Source Current --- --- -160 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-66A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDB39E3CZ 30V P-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 100 25 50 75 100 125 150 0 2 4 6 8 10 VGS=-3V VGS=-3.3V VGS=-3.5V VGS=-3.7V VGS=-4V VGS=-4.5V 0 2 4 6 8 10 Tc=25℃ ID=-12A 5 15 25 35 45 55 Tc=25℃ VGS=-4.5V VGS=-6V VGS=-10V -ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) -VDS ,Drain to Source V oltage (V) -VGS , Gate to Source V oltage (V) -ID , Drain Current (A)

Potens semiconductor corp. Ver.1.02 PDB39E3CZ 30V P-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 Gate Charge Waveform Fig.8 Gate Charge Characteristics -VGS -10V / -4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 13 26 39 52 65 ID=-40A VDS=-15V 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms 100 1000 10000 0.1 1 10 Ciss Coss Crss -VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response -VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) -ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.02 PDB39E3CZ 30V P-Channel MOSFETs eb D PIN1 SIDE VIEWTOP VIEWBOTTOM VIEW k L E AA1 Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.800 0.700 0.031 0.028 A1 0.250 0.150 0.010 0.006 D 3.400 3.200 0.134 0.126 E 3.400 3.200 0.134 0.126 D1 2.850 2.650 0.112 0.104 E1 2.250 2.000 0.089 0.079 b 0.400 0.250 0.016 0.010 L 0.600 0.400 0.024 0.016 L1 0.350 BSC 0.014 BSC k 0.500 0.250 0.020 0.010 e 0.65BSC 0.026BSC DFN3.3X3.3 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.02 PDB39E3CZ 30V P-Channel MOSFETs unit : mm DFN3.3X3.3 RECOMMENDED LAND PATTERN