PDL3907 POTENS

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Technical content

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 Notebook  Load Switch  Battery Protection  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics SOT223 Pin Configuration S D G D G D S

Potens semiconductor corp. Ver.1.00 PDL3907 30V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ IDSS Drain-Source Leakage Current VDS=-27V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-6A --- 18 22 m VGS=-4.5V , ID=-4A --- 26 35 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-3A --- 7 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-15V , VGS=-4.5V , ID=-5A --- 11 17 nC Qgs Gate-Source Charge2 , 3 --- 3.4 6 Qgd Gate-Drain Charge2 , 3 --- 4.2 8 Td(on) Turn-On Delay Time2 , 3 VDD=-15V , VGS=-10V , RG=6 ID=-1A --- 5.8 11 Ns Tr Rise Time2 , 3 --- 18.8 36 Td(off) Turn-Off Delay Time2 , 3 --- 46.9 90 Tf Fall Time2 , 3 --- 12.3 23 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 1250 2500 pF Coss Output Capacitance --- 160 320 Crss Reverse Transfer Capacitance --- 90 180 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -6 A ISM Pulsed Source Current --- --- -12 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDL3907 30V P-Channel MOSFETs Normalized Gate Threshold V oltage Fig.3 Normalized Vth vs. TJ TJ , Junction Temperature (℃) -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ

Potens semiconductor corp. Ver.1.00 PDL3907 30V P-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff -VDS -VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.00 PDL3907 30V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.800 1.520 0.071 0.060 A1 0.100 0.000 0.004 0.000 A2 1.700 1.500 0.067 0.059 b 0.820 0.660 0.032 0.026 c 0.350 0.250 0.014 0.010 D 6.400 6.200 0.252 0.244 D1 3.100 2.900 0.122 0.114 E 3.700 3.300 0.146 0.130 E1 7.070 6.830 0.278 0.269 e 2.30(BSC) 0.091(BSC) e1 4.700 4.500 0.185 0.177 L 1.150 0.900 0.045 0.035 θ 10° 0° 10° 0° SOT223 PACKAGE INFORMATION