PDB40B8AF6H POTENS

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Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN10X10 6 IN 1 Pin Configuration  3-phase Motor Driver  3-phase Invertor Cu Exposed Pad

Potens semiconductor corp. Ver.1.02 PDB40B8AF6H 40V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS(+) Gate-Source Leakage Current VGS=20V, VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=40A --- 1.8 2.2 m Static Drain-Source On-Resistance4 VGS=10V , ID=40A --- 2.2 2.6 m Static Drain-Source On-Resistance5 VGS=10V , ID=40A --- 2.8 3.5 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 2.8 4 V gfs Forward Transconductance VDS=10V , ID=5A --- 15 --- S Dynamic and switching Characteristics Qg Total Gate Charge6 , 7 VDS=20V , VGS=10V , ID=70A --- 58.4 88 nC Qgs Gate-Source Charge6 , 7 --- 14.3 21.5 Qgd Gate-Drain Charge6 , 7 --- 12 20 Td(on) Turn-On Delay Time6 , 7 VDD=20V , VGS=10V , RG=6 ID=70A --- 14.6 --- ns Tr Rise Time6 , 7 --- 21.5 --- Td(off) Turn-Off Delay Time6 , 7 --- 52 --- Tf Fall Time6 , 7 --- 83.5 --- Ciss Input Capacitance VDS=20V , VGS=0V , F=1MHz --- 3310 4965 pF Coss Output Capacitance --- 1090 1650 Crss Reverse Transfer Capacitance --- 100 150 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 150 A ISM Pulsed Source Current --- --- 300 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/μs , TJ=25℃ --- 38 --- ns Qrr Reverse Recovery Charge --- 90 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=80A.,RG=25,Starting TJ=25℃. 3. The RDS(ON) value is the position of M1, M2, M3 and M5. 4. The RDS(ON) value is the position of M4. 5. The RDS(ON) value is the position of M6. 6. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 7. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDB40B8AF6H 40V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Normalized On Resistance Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area Normalized Thermal Response ID , Drain Current (A) TC , Case Temperature (℃) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) VDS , Drain to Source V oltage (V) Square Wave Pulse Duration (s)

Potens semiconductor corp. Ver.1.02 PDB40B8AF6H 40V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.02 PDB40B8AF6H 40V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Normal Max Min Normal Max k 0.700 REF 0.028 REF k1 0.700 REF 0.028 REF k2 0.650 REF 0.026 REF k3 0.650 REF 0.026 REF k4 0.850 REF 0.033 REF e 1.400 BSC 0.055 BSC DFN10X10 6 IN 1 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.02 PDB40B8AF6H 40V N-Channel MOSFETs DFN10X10 6 in 1 RECOMMENDED LAND PATTERN unit : mm