PDL6909 POTENS

Document overview

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Technical content

Features

Applications

 Motor Drive  Power Tools  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics SOT223 Pin Configuration D S G D G S D

Potens semiconductor corp. Ver.1.01 PDL6909 60V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.05 --- V/℃ IDSS Drain-Source Leakage Current VDS=-60V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-48V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-3A --- 87 105 m VGS(th) Gate Threshold Voltage VGS=VDS , ID=-250uA -1.0 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 3 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-3A --- 5.5 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=-30V , VGS=-10V , ID=-2A --- 10 15 nC Qgs Gate-Source Charge3 , 4 --- 1.6 3.2 Qgd Gate-Drain Charge3 , 4 --- 3 6 Td(on) Turn-On Delay Time3 , 4 VDD=-30V , VGS=-10V , RG=6 ID=-1A --- 8 16 ns Tr Rise Time3 , 4 --- 15.4 30 Td(off) Turn-Off Delay Time3 , 4 --- 42.8 80 Tf Fall Time3 , 4 --- 8.4 16 Ciss Input Capacitance VDS=-30V , VGS=0V , F=1MHz --- 785 1300 pF Coss Output Capacitance --- 175 300 Crss Reverse Transfer Capacitance --- 112 220 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 36 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -3.2 A ISM Pulsed Source Current --- --- -6.4 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-18A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PDL6909 60V P-Channel MOSFETs TA , Ambient Temperature (℃) Fig.1 Continuous Drain Current vs. TA Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area -ID , Continuous Drain Current (A) Normalized Gate Threshold V oltage

Potens semiconductor corp. Ver.1.01 PDL6909 60V P-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 EAS Waveform

Potens semiconductor corp. Ver.1.01 PDL6909 60V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.800 1.520 0.071 0.060 A1 0.100 0.000 0.004 0.000 A2 1.700 1.500 0.067 0.059 b 0.820 0.660 0.032 0.026 c 0.350 0.250 0.014 0.010 D 6.400 6.200 0.252 0.244 D1 3.100 2.900 0.122 0.114 E 3.700 3.300 0.146 0.130 E1 7.070 6.830 0.278 0.269 e 2.30(BSC) 0.091(BSC) e1 4.700 4.500 0.185 0.177 L 1.150 0.900 0.045 0.035 θ 10° 0° 10° 0° SOT223 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.01 PDL6909 60V P-Channel MOSFETs SOT223 RECOMMENDED LAND PATTERN unit : mm