PDB3006HX4H POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 Full Bridge Applications DFN5X6 4 IN 1 Pin Configuration GND Phase1 VDD Phase2 VDD Phase1 Phase2 GND PIN1 Cu Exposed Pad

Potens semiconductor corp. Ver.1.02 PDB3006HX4H 30V 4 IN 1 N-Channel MOSFETs Static State Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 4.7 5.5 m VGS=4.5V , ID=10A --- 6.3 8.5 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=10A --- 10 --- S Qg Total Gate Charge3 , 4 VDS=15V , VGS=10V , ID=20A --- 24.6 49 nC Qgs Gate-Source Charge3 , 4 --- 1.85 3.7 Qgd Gate-Drain Charge3 , 4 --- 6.8 13 Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=3.3 ID=15A --- 7.5 15 ns Tr Rise Time3 , 4 --- 14.5 28 Td(off) Turn-Off Delay Time3 , 4 --- 35.2 60 Tf Fall Time3 , 4 --- 9.6 19 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 1160 1900 pF Coss Output Capacitance --- 200 400 Crss Reverse Transfer Capacitance --- 180 360 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.5 5  Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=25V, L=0.1mH, IAS=20A 20 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 64 A ISM Pulsed Source Current3 --- --- 128 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=10A , di/dt=100A/µs TJ=25℃ --- 115 --- nS Qrr Reverse Recovery Charge --- 148 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=42A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics Dynamic Characteristics Guaranteed Avalanche Energy

Potens semiconductor corp. Ver.1.02 PDB3006HX4H 30V 4 IN 1 N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Impedance TJ , Junction Temperature (℃)

Potens semiconductor corp. Ver.1.02 PDB3006HX4H 30V 4 IN 1 N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.8 EAS Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.02 PDB3006HX4H 30V 4 IN 1 N-Channel MOSFETs Symbol Dimensions In Millimeters Symbol Dimensions In Millimeters MIN Normal MAX MIN Normal MAX E 5.900 6.000 6.100 k 0.550 REF D1 1.525 1.625 1.725 k1 0.550 REF E1 3.500 3.600 3.700 k2 0.550 REF D2 1.375 1.475 1.575 k3 0.550 REF E2 1.425 1.525 1.625 e 1.27 BSC DFN5X6 4 IN 1 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.02 PDB3006HX4H 30V 4 IN 1 N-Channel MOSFETs DFN5X6 4 IN 1 RECOMMENDED FOOTPRINT 1.525 0.6 1.375 1.375 1.270 0.600 1.450 1.450 0.650 0.400 0.600 3.500 0.600 0.650