PDB4909CL POTENS

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 Notebook  Load Switch  Battery Protection  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN2X2-6L Pin Configuration S D G S D D G D D D D S G D D D S

Potens semiconductor corp. Ver.1.03 PDB4909CL 40V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250µA -40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ IDSS Drain-Source Leakage Current VDS=-40V , VGS=0V , TJ=25℃ --- --- -1 µA VDS=-32V , VGS=0V , TJ=125℃ --- --- -10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-2A --- 40 48 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250µA -1.2 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-3A --- 5 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=-20V , VGS=-10V , ID=-2A --- 13 19 nC Qgs Gate-Source Charge3 , 4 --- 1.5 2.3 Qgd Gate-Drain Charge3 , 4 --- 3.1 4.6 Td(on) Turn-On Delay Time3 , 4 VDD=-20V , VGS=-10V , RG=6 ID=-2A --- 6.3 10 ns Tr Rise Time3 , 4 --- 7.2 11 Td(off) Turn-Off Delay Time3 , 4 --- 46 69 Tf Fall Time3 , 4 --- 14 21 Ciss Input Capacitance VDS=-20V , VGS=0V , F=1MHz --- 825 1240 pF Coss Output Capacitance --- 68 102 Crss Reverse Transfer Capacitance --- 50 75 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -5 A ISM Pulsed Source Current --- --- -10 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-30V, IS=-2A di/dt=100A/µs , TJ=25℃ --- 30 --- ns Qrr Reverse Recovery Charge --- 15 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-25A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.03 PDB4909CL 40V P-Channel MOSFETs 0.01 0.1 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms Normalized Gate Threshold V oltage Fig.3 Normalized Vth vs. TJ TJ , Junction Temperature (℃) -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area -ID , Continuous Drain Current (A) TJ , Junction Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ

Potens semiconductor corp. Ver.1.03 PDB4909CL 40V P-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff -VDS -VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.03 PDB4909CL 40V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.800 0.500 0.031 0.019 A2 0.250 0.145 0.010 0.006 b 0.350 0.250 0.014 0.010 D 2.100 1.900 0.083 0.075 D1 1.050 0.800 0.041 0.031 D2 0.430 0.250 0.017 0.010 D3 0.200BSC 0.008BSC D4 0.200BSC 0.008BSC E 2.100 1.900 0.083 0.075 E1 1.250 0.800 0.049 0.031 E2 0.750 0.460 0.029 0.018 e 0.650BSC 0.026BSC L 0.350 0.225 0.014 0.009 DFN2X2-6L PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.03 PDB4909CL 40V P-Channel MOSFETs RECOMMENDED LAND PATTERN DFN2X2-6L unit : mm 0.65 0.30 0.30 0.60 1.60 1.725 0.325 2.05 0.90 0.95