PDB6988L-5 POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 6

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN2X2-6L Pin Configuration

Applications

D D G S S D G S  Notebook  Load Switch  Battery Protection  Hand-held Instruments D S D D D D G

Potens semiconductor corp. Ver.1.02 PDB6988L-5 65V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 65 --- --- V IDSS Drain-Source Leakage Current VDS=60V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=48V , VGS=0V , TJ=85℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=2A --- 14.5 17.4 m VGS=4.5V , ID=1.5A --- 24 31 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.2 1.6 2.5 V gfs Forward Transconductance VDS=10V , ID=1A --- 3 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=30V , VGS=10V , ID=4A --- 10.9 22 nC Qgs Gate-Source Charge2 , 3 --- 1.5 3 Qgd Gate-Drain Charge2 , 3 --- 4.4 9 Td(on) Turn-On Delay Time2 , 3 VDD=30V , VGS=10V , RG=6 ID=4A --- 8 16 ns Tr Rise Time2 , 3 --- 12 24 Td(off) Turn-Off Delay Time2 , 3 --- 25 50 Tf Fall Time2 , 3 --- 18 36 Ciss Input Capacitance VDS=30V , VGS=0V , F=1MHz --- 653 1300 pF Coss Output Capacitance --- 192 380 Crss Reverse Transfer Capacitance --- 27 60 Rg Gate resistance VGS=0V, VDS=0V, f=1MHz --- 0.8 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 7 A ISM Pulsed Source Current3 --- --- 14 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=50V, IS=4A di/dt=100A/µs , TJ=25℃ --- 30 --- ns Qrr Reverse Recovery Charge --- 15 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDB6988L-5 65V N-Channel MOSFETs Fig.6 Maximum Safe Operation Area 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.5 1.5 2.5 -50 0 50 100 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 1.4 2.8 4.2 5.6 25 50 75 100 125 150 0 3 6 9 12 ID=4A VDS=30V 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Fig.5 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Normalized Thermal Response ID , Continuous Drain Current (A) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.02 PDB6988L-5 65V N-Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%

Potens semiconductor corp. Ver.1.02 PDB6988L-5 65V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.800 0.500 0.031 0.019 A2 0.250 0.145 0.010 0.006 b 0.350 0.250 0.014 0.010 D 2.100 1.900 0.083 0.075 D1 1.050 0.800 0.041 0.031 D2 0.430 0.250 0.017 0.010 D3 0.200BSC 0.008BSC D4 0.200BSC 0.008BSC E 2.100 1.900 0.083 0.075 E1 1.250 0.800 0.049 0.031 E2 0.750 0.460 0.029 0.018 e 0.650BSC 0.026BSC L 0.350 0.225 0.014 0.009 DFN2X2-6L PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.02 PDB6988L-5 65V N-Channel MOSFETs RECOMMENDED LAND PATTERN DFN2X2-6L unit : mm 0.65 0.30 0.30 0.60 1.60 1.725 0.325 2.05 0.90 0.95