PWEF25D2S POTENS

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 Battery Management  POL Applications  Battery Protection Applications  1-Cell Lithium-ion Battery Charging and Discharging Switch Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics SimCSP Dual Pin Configuration G2 S2 G1 S1 Pin1 Pin1

Potens semiconductor corp. Ver.1.01 PWEF25D2S 24V Dual N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVSSS Source1 - Source2 Breakdown Voltage VGS=0V , ID=250µA 24 --- --- V ISSS Zero Gate Voltage Source Current VSS=24V , VGS=0V , TJ=25℃ --- --- 1 µA VSS=20V , VGS=0V , TJ=85℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±10 µA On Characteristics RSS(ON) Static Source-Source On-Resistance VGS=4.5V , IS=3A 31 38 46 m VGS=4V , IS=3A 32 39 47 m VGS=3.7V , IS=3A 34 41 49 m VGS=3.1V , IS=3A 36 44 57 m VGS=2.5V , IS=3A 42 51 66 m VGS(th) Gate Threshold Voltage VGS=VSS , IS =250µA 0.4 0.8 1.2 V Dynamic and switching Characteristics2 Qg Total Gate Charge VSS=12V , VGS=10V , IS=2A --- 17 34 nC Qgs Gate-Source Charge --- 1.3 5 Qgd Gate-Drain Charge --- 13.6 30 Td(on) Turn-On Delay Time VSS=12V , VGS=10V , RG=6 IS=2A --- 20 40 ns Tr Rise Time --- 24 50 Td(off) Turn-Off Delay Time --- 50 100 Tf Fall Time --- 26 55 Ciss Input Capacitance VSS=12V , VGS=0V , F=1MHz --- 310 650 pF Coss Output Capacitance --- 70 150 Crss Reverse Transfer Capacitance --- 35 80 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VS=0V , Force Current --- --- 6 A VFSS Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PWEF25D2S 24V Dual N-Channel MOSFETs 0 1 2 3 4 5 VGS=1.2V VGS=2V VGS=1.5V VGS=1.7V VGS=4.5V 100 150 200 250 0 1 2 3 4 5 Tc=25℃ ID=3A 3 6 9 12 15 Tc=25℃ VGS=3.1V VGS=2.5V VGS=3.7V VGS=4.5V 25 50 75 100 125 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 IS , Continuous Source Current (A) Fig.1 Typical Output Char acteristics IS , Continuous Source Current (A) TC , Case Temperature (℃) Fig.2 Continuous Source Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RSS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. IS RSS(ON) , Turn-On Resistance (mohm) VSS , Source to Source V oltage (V) VGS , Gate to Source V oltage (V) IS , Source Current (A)

Potens semiconductor corp. Ver.1.01 PWEF25D2S 24V Dual N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.8 Gate Charge Characteristics Fig.12 Gate Charge Waveform 100 1000 0.1 1 10 Ciss Coss Crss 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100μs 10μs 1ms Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% VSS VGS 10V / 4.5V Qg QgdQgs Gate Charge 0 3 6 9 12 15 18 ID=2A VDS=12V 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 Normalized Thermal Response VSS , Source to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VSS , Source to Source V oltage (V) IS , Continuous Source Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.01 PWEF25D2S 24V Dual N-Channel MOSFETs SimCSP Dual PACKAGE INFORMATION TOP VIEW Thickness MAX = 0.35 mm MAX = 0.05 mm G1 S1 G2 S2 Pin1 MARK 0.3 mm BOTTOM VIEW Pin1 MARK 1.30 ± 0.03 mm 1.30 ± 0.03 mm 0.65 mm 0.65 mm 0.175 mm