PMY09N90P POTENS

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Technical content

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Applications

 High efficient switched mode power supplies  TV Power  Adapter/charger  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics TO-3P Pin Configuration  900V,9A, RDS(ON) =1.5Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available D S G S D G

Potens semiconductor corp. Ver.1.00 PMY09N90P 900V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 900 --- --- V IDSS Drain-Source Leakage Current VDS=900V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=720V , VGS=0V , TJ=100℃ --- --- 20 uA IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=4.5A --- 1.2 1.5  VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 3 4 5 V gfs Forward Transconductance VDS=30V , ID=3A --- 6 --- S Dynamic and switching Characteristics Qg Total Gate Charge3,4 VDS=450V , VGS=10V , ID=4.5A --- 43 65 nC Qgs Gate-Source Charge3,4 --- 13 20 Qgd Gate-Drain Charge3,4 --- 23 35 Td(on) Turn-On Delay Time3,4 VDD=450V , VGS=10V , RG=25 ID=4.5A --- 50 75 ns Tr Rise Time3,4 --- 65 100 Td(off) Turn-Off Delay Time3,4 --- 86 130 Tf Fall Time3,4 --- 34 50 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 1980 2970 pF Coss Output Capacitance --- 145 220 Crss Reverse Transfer Capacitance --- 6.5 10 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.4 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 9 A ISM Pulsed Source Current --- --- 18 A VSD Diode Forward Voltage VGS=0V , IS=4.5A , TJ=25℃ --- --- 1.3 V trr Reverse Recovery Time3 VR=400V, IS=5A dI/dt=100A/µs ,TJ=25℃ --- 505 --- ns Qrr Reverse Recovery Charge3 --- 6.3 --- uC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=100V,VGS=10V,L=10mH,IAS=6.8A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PMY09N90P 900V N-Channel MOSFETs 25 50 75 100 125 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 0 2 4 6 8 VGS=5.7V VGS=6V VGS=6.5V VGS=6.3V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Tc=25℃ ID=6A ID=4.5A 1.0 1.1 1.2 1.3 1.4 1.5 2 3 4 5 6 7 8 Tc=25℃ VGS=8V VGS=10V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PMY09N90P 900V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 IAS VGS BVDSS VDD EAS= 1

2 L x IAS

ID=5A VDS=450V 100 1000 0.1 1 10 100 Ciss Coss Crss 0.01 0.1 100 0.1 1 10 100 1000 TC=25℃ DC 100ms 10ms 100us 10us 1ms VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PMY09N90P 900V N-Channel MOSFETs SYMBOL mm SYMBOL mm MIN MAX MIN MAX A 4.300 4.700 L1 2.100 3.300 b 1.700 2.300 P 3.000 3.400 b1 0.750 1.300 P1 7.200 REF b2 --- 0.200 R 3.74 REF C 0.500 0.900 S 0.900 REF D 19.70 20.30 Q 2.600 3.000 D1 1.500 2.500 Q1 4.300 4.700 D2 0.700 1.300 Z1 1.700 2.300 E 15.20 15.80 Z2 1.400 2.000 F 1.300 1.700 e 5.45 BSC L 20.00 21.00 TO-3P PACKAGE INFORMATION