PMF04N65P POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics  650V,4A, RDS(ON) =2.4Ω@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available

Applications

 High efficient switched mode power supplies  TV Power  Adapter/charger  Server Power  LED Lighting TO220F Pin Configuration D G S G D S

Potens semiconductor corp. Ver.1.01 PMF04N65P 650V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 650 --- --- V IDSS Drain-Source Leakage Current VDS=650V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=520V , VGS=0V , TJ=125℃ --- --- 20 uA IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=2A --- 2 2.4  VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.5 3.5 4.5 V gfs Forward Transconductance VDS=20V , ID=2A --- 3 --- S Dynamic and switching Characteristics Qg Total Gate Charge3,4 VDS=350V , VGS=10V , ID=2A --- 15 23 nC Qgs Gate-Source Charge3,4 --- 3 5 Qgd Gate-Drain Charge3,4 --- 9 14 Td(on) Turn-On Delay Time3,4 VDD=350V , VGS=10V , RG=25 ID=2A --- 15 23 ns Tr Rise Time3,4 --- 18 27 Td(off) Turn-Off Delay Time3,4 --- 50 75 Tf Fall Time3,4 --- 20 30 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 670 1000 pF Coss Output Capacitance --- 50 75 Crss Reverse Transfer Capacitance --- 3 5 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 3.4 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 4 A ISM Pulsed Source Current --- --- 8 A VSD Diode Forward Voltage VGS=0V , IS=4A , TJ=25℃ --- --- 1.3 V trr Reverse Recovery Time VR=400V, IS=2A di/dt=100A/µs , TJ=25℃ --- 220 --- ns Qrr Reverse Recovery Charge --- 1.4 --- uC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=10mH,IAS=3A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PMF04N65P 650V N-Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 25 50 75 100 125 150 0.8 1.6 2.4 3.2 0 2 4 6 8 10 VGS=4.7V VGS=5V VGS=5.3V VGS=5.5V VGS=6V 1.0 1.4 1.8 2.2 2.6 3.0 2 4 6 8 10 12 Tc=25℃ ID=2A ID=3A 1.5 1.7 1.9 2.1 2.3 2.5 Tc=25℃ VGS=6V VGS=10V VGS=8V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (ohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (ohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.01 PMF04N65P 650V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 IAS VGS BVDSS VDD EAS= 1

2 L x IAS

ID=2A VDS=350V 100 1000 0.1 1 10 100 Ciss Coss Crss 0.01 0.1 100 0.1 1 10 100 1000 TC=25℃ DC 100ms 10ms 100us 10us 1ms VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.01 PMF04N65P 650V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 9.860 10.460 0.389 0.411 A1 3.100 3.500 0.122 0.138 B1 15.450 16.300 0.608 0.642 B2 4.400 5.000 0.173 0.197 B3 6.280 7.100 0.247 0.280 C 3.100 3.500 0.122 0.138 C1 12.270 12.870 0.483 0.507 C2 9.600 10.520 0.378 0.414 D 2.540BSC 0.1BSC D1 1.070 1.470 0.042 0.058 D2 0.600 1.000 0.024 0.039 K 2.800 3.500 0.110 0.138 E1 2.340 2.740 0.092 0.108 E3 0.350 0.650 0.014 0.026 E4 2.460 2.960 0.097 0.117 TO220F PACKAGE INFORMATION