PMD02N60N POTENS

Document overview

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Technical content

Features

Applications

 High efficient switched mode power supplies  TV Power  Adapter/charger  LED Lighting Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics TO252 Pin Configuration Electrical Characteristics (TJ=25 ℃, unless otherwise noted)  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available D G S D G S

Potens semiconductor corp. Ver.1.00 PMD02N60N 600V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 600 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=250uA --- 0.56 --- V/℃ IDSS Drain-Source Leakage Current VDS=600V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=480V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=1A --- --- 4.4  VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 4 V gfs Forward Transconductance VDS=40V , ID=1A --- 2 --- S Dynamic and switching Characteristics Qg Total Gate Charge2,3 VDS=480V , VGS=10V , ID=2A --- 5.5 --- nC Qgs Gate-Source Charge2,3 --- 1.1 --- Qgd Gate-Drain Charge2,3 --- 3.2 --- Td(on) Turn-On Delay Time2,3 VDD=300V , VGS=10V , RG=25 ID=2A --- 17.2 23 ns Tr Rise Time2,3 --- 14.3 18 Td(off) Turn-Off Delay Time2,3 --- 27.6 32.8 Tf Fall Time2,3 --- 17.4 19.8 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 238 --- pF Coss Output Capacitance --- 20 --- Crss Reverse Transfer Capacitance --- 4 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 2 A ISM Pulsed Source Current --- --- 4 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.5 V trr Reverse Recovery Time2 VGS=0V,IS=2A , dI/dt=100A/µs TJ=25℃ --- 154 189 nS Qrr Reverse Recovery Charge2 --- 0.8 0.98 uC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PMD02N60N 600V N-Channel MOSFETs ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance () TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage (V) TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.00 PMD02N60N 600V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.7 Switching Time Waveform Fig.8 EAS Waveform

Potens semiconductor corp. Ver.1.00 PMD02N60N 600V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.400 2.200 0.094 0.087 A1 1.110 0.910 0.044 0.036 A2 0.150 0.000 0.006 0.000 B 6.800 6.400 0.268 0.252 C 0.580 0.450 0.023 0.018 C1 0.580 0.460 0.023 0.018 D 5.500 5.100 0.217 0.201 E 2.386 2.186 0.094 0.086 F 0.940 0.600 0.037 0.024 F1 0.860 0.500 0.034 0.020 L 10.400 9.400 0.409 0.370 L1 3.000 2.400 0.118 0.094 L2 6.200 5.400 0.244 0.213 L3 1.200 0.600 0.047 0.024 θ 9° 3° 9° 3° TO252 PACKAGE INFORMATION